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HM51W4405BS-6R PDF预览

HM51W4405BS-6R

更新时间: 2024-10-25 23:56:15
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
30页 370K
描述
x4 EDO Page Mode DRAM

HM51W4405BS-6R 数据手册

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HM51W4405BS Series  
1,048,576-word × 4-bit Dynamic Random Access Memory  
ADE-203-686A (Z)  
Rev. 1.0  
Nov. 29, 1996  
Description  
The Hitachi HM51W4405BS Series is a CMOS dynamic RAM organized 1,048,576-word × 4-bit.  
HM51W4405BS Series has realized higher density, higher performance and various functions by  
employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The  
HM51W4405BS Series offers Extended Data Out (EDO) Page Mode as a high speed access mode. It has  
the package variations of standard 26-pin plastic SOJ.  
Features  
Single 3.3 V (±0.3 V) (HM51W4405BS-7)  
Single 3.3 V (+0.3 V/–0.15 V) (HM51W4405BS-6R)  
High speed  
Access time: 60/70 ns (max)  
Low power dissipation  
Active mode: 288/252 mW (max)  
Standby mode: 7.2 mW (max)  
EDO page mode capability  
1024 refresh cycles : 16 ms  
3 variations of refresh  
RAS-only refresh  
CAS-before-RAS refresh  
Hidden refresh  
Ordering Information  
Type No.  
Access time  
Package  
HM51W4405BS-6R  
HM51W4405BS-7  
60 ns  
70 ns  
300-mil 26-pin plastic SOJ (CP-26/20D)  
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