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HM3E65728BH-9 PDF预览

HM3E65728BH-9

更新时间: 2024-11-08 20:09:11
品牌 Logo 应用领域
TEMIC 静态存储器光电二极管
页数 文件大小 规格书
8页 102K
描述
Standard SRAM, 2KX8, 25ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24

HM3E65728BH-9 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:0.600 INCH, PLASTIC, DIP-24Reach Compliance Code:unknown
风险等级:5.81最长访问时间:25 ns
I/O 类型:COMMONJESD-30 代码:R-PDIP-T24
JESD-609代码:e0内存密度:16384 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:24字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP24,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified最大待机电流:0.04 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.12 mA标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUALBase Number Matches:1

HM3E65728BH-9 数据手册

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MATRA MHS  
HM 65728B  
2K × 8 High Speed CMOS SRAM  
Description  
The HM 65728B is a high speed CMOSstatic RAM Easy memory expansion is provided by an active low chip  
organized as 2048 × 8 bits. It is manufactured using select (CS) and active low output enable (OE) and three  
MHS’s high performance CMOS technology.  
state drivers.  
All inputs and outputs of the HM 65728 are TTL  
compatible and operate from single 5V supply thus  
simplifying system design.  
Access times as fast as 25 ns are available with maximum  
power consumption of only 600 mW.  
The HM 65728B features fully static operation requiring  
no external clocks or timing strobes. The automatic  
power-down feature reduces the power consumption by  
80 % when the circuit is deselected.  
The HM 65728B is 100 % processed following the test  
methods of MIL STD 883 and/or ESA/SCC 9000 making  
it ideally suitable for military/space applications that  
demand superior levels of performance and reliability.  
Features  
D Fast Access Time  
D 300 and 600 Mils Width Package  
D TTL Compatible Inputs and Outputs  
D Asynchronous  
Commercial : 25/35/45/55 ns (max)  
Military : 25/35/45/55 ns (max)  
D Low Power Consumption Active :  
550 mW (max)  
D Capable of Withstanding Greater than 2000 V Electrostatic  
Discharge  
Standby : 110 mW (max)  
D Wide Temperature Range :  
–55°C to + 125°C  
D Single 5 Volt Supply  
Interface  
Block Diagram  
Rev. C (16/08/95)  
1

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HM3E65728BK-9:D TEMIC

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Standard SRAM, 2KX8, 35ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24
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