Datasheet > 存储 > SRAM> HLX6256-EF

HLX6256-EF

更新时间： 2024-09-14 03:42:07

品牌	Logo	应用领域
霍尼韦尔 - HONEYWELL		/
页数	文件大小	规格书
12页	153K
描述
32K x 8 STATIC RAM Low Power SOI

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HLX6256-EF 数据手册

Military & Space Products

32K x 8 STATIC RAM—Low Power SOI

HLX6256

FEATURES

RADIATION

OTHER

• Fabricated with RICMOS^™IV Silicon on Insulator (SOI)

0.55 µm Low Power Process

• Read/Write Cycle Times

≤ 17 ns (Typical)

≤ 25 ns (-55 to 125°C)

• Total Dose Hardness through 1x10⁶rad(SiO₂)

• Neutron Hardness through 1x10¹⁴cm^-2

• Typical Operating Power <10 mW/MHz

• Asynchronous Operation

• Dynamic and Static Transient Upset Hardness

through 1x10⁹rad(Si)/s

• JEDEC Standard Low Voltage

CMOS Compatible I/O

• Dose Rate Survivability through 1x10¹¹rad(Si)/s

• Soft Error Rate of <1x10^-10upsets/bit-day

• Latchup Free

• Single 3.3 V 0.3V Power Supply

• Packaging Options

- 28-Lead Flat Pack (0.500 in. x 0.720 in.)

- 28-Lead DIP, MIL-STD-1835, CDIP2-T28

- 36-Lead Flat Pack (0.630 in. x 0.650 in.)

- Various Multi-Chip Module (MCM) Configurations

GENERAL DESCRIPTION

The 32K x 8 Radiation Hardened Static RAM is a high

performance 32,768 word x 8-bit static random access

memory with industry-standard functionality. It is fabri-

cated with Honeywell’s radiation hardened technology,

and is designed for use in low voltage systems operating in

radiation environments. The RAM operates over the full

military temperature range and requires only a single 3.3 V

0.3V power supply. The RAM is compatible with JEDEC

standard low voltage CMOS I/O. Power consumption is

typically less than 10 mW/MHz in operation, and less than

2 mW when de-selected. The RAM read operation is fully

asynchronous,withanassociatedtypicalaccesstimeof14

ns at 3.3 V.

Honeywell’senhancedSOIRICMOS^™IV(RadiationInsen-

sitiveCMOS)technologyisradiationhardenedthroughthe

use of advanced and proprietary design, layout and pro-

cess hardening techniques. The RICMOS^™IV low power

process is a SIMOX CMOS technology with a 150 Å gate

oxideandaminimumdrawnfeaturesizeof0.7µm(0.55µm

effective gate length—L_eff). Additional features include

tungsten via plugs, Honeywell’s proprietary SHARP pla-

narization process and a lightly doped drain (LDD) struc-

ture for improved short channel reliability. A 7 transistor

(7T) memory cell is used for superior single event upset

hardening, while three layer metal power bussing and the

low collection volume SIMOX substrate provide improved

dose rate hardening.

12 3 4 5 6 7...12

中文翻译

下载PDF

与HLX6256-EF相关器件

型号	品牌	获取价格	描述	数据表
HLX6256-EH	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI
HLX6256-EN	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI
HLX6256-ER	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI
HLX6256KBF	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI
HLX6256KBH	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI
HLX6256KBN	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI
HLX6256KBR	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI
HLX6256KEF	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI
HLX6256KEH	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI
HLX6256KEN	HONEYWELL	获取价格	32K x 8 STATIC RAM Low Power SOI