Datasheet > HLX6228AEF

HLX6228AEF

更新时间： 2024-09-07 21:55:59

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器
页数	文件大小	规格书
12页	155K
描述
128K x 8 STATIC RAM?Low Power SOI

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HLX6228AEF 数据手册

Military & Space Products

HLX6228

128K x 8 STATIC RAM—Low Power SOI

FEATURES

RADIATION

OTHER

• Fabricated with RICMOS^™IV Silicon on Insulator

• Read/Write Cycle Times

≤ 32 ns (-55 to 125°C)

(SOI) 0.7 µm Low Power Process (L_eff= 0.55 µm)

• Total Dose Hardness through 1x10⁶rad(Si)

• Neutron Hardness through 1x10¹⁴cm^-2

• Typical Operating Power <9 mW/MHz

• JEDEC Standard Low Voltage

CMOS Compatible I/O

• Dynamic and Static Transient Upset Hardness

through 1x10⁹rad(Si)/s

• Single 3.3 V 0.3 V Power Supply

• Asynchronous Operation

• Dose Rate Survivability through 1x10¹¹rad(Si)/s

• Soft Error Rate of <1x10^-10Upsets/bit-day in Geosyn-

chronous Orbit

• Packaging Options

– 32-Lead CFP (0.820 in. x 0.600 in.)

– 40-Lead CFP (0.775 in. x 0.710 in.)

• No Latchup

GENERAL DESCRIPTION

The 128K x 8 Radiation Hardened Static RAM is a high

performance 131,072 word x 8-bit static random access

memory with industry-standard functionality. It is fabricated

with Honeywell’s radiation hardened technology, and is

designed for use in low voltage systems operating in radiation

environments. The RAM operates over the full military

temperature range and requires only a single 3.3 V 0.3V

power supply. The RAM is compatible with JEDEC standard

low voltage CMOS I/O. Power consumption is typically less

than 9 mW/MHz in operation, and less than 2 mW when de-

selected.The RAM read operation is fully asynchronous, with

an associated typical access time of 32 ns at 3.3 V.

Honeywell’s enhanced SOI RICMOS™IV (Radiation Insensi-

tive CMOS) technology is radiation hardened through the use

of advanced and proprietary design, layout and process

hardeningtechniques.TheRICMOS™IVlowpowerprocessis

a SIMOX CMOS technology with a 150 Å gate oxide and a

minimum drawn feature size of 0.7 µm (0.55 µm effective gate

length—L_eff). Additional features include tungsten via plugs,

Honeywell’s proprietary SHARP planarization process and a

lightly doped drain (LDD) structure for improved short channel

reliability. A 7 transistor (7T) memory cell is used for superior

single event upset hardening, while three layer metal power

bussing and the low collection volume SIMOX substrate

provide improved dose rate hardening.

Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.myspaceparts.com

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