Datasheet > HGN045NE4SL

HGN045NE4SL

更新时间： 2024-09-14 12:56:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
6页	788K
描述
45V N-Ch Power MOSFET

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中文翻译

获取价格

数据手册

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HGN045NE4SL 数据手册

HGN045NE4SL

P-1

45V N-Ch Power MOSFET

3.5

4.6

101

mΩ

V_DS

Feature

R_DS(on),typV_GS=10V

R_DS(on),typV_GS=4.5V

I_{D (Sillicon Limited)}

I_{D (Package Limited)}

◇ Optimized for high speed switching, Logic Level

◇ Enhanced Body diode dv/dt capability

◇ Enhanced Avalanche Ruggedness

◇ 100% UIS Tested, 100% Rg Tested

◇ Lead Free, Halogen Free

Application

◇ Synchronous Rectification in SMPS

◇ Hard Switching and High Speed Circuit

◇ Power Tools

Drain

DFN5x6

◇ UPS

Gate

◇ Motor Control

Src

Part Number

HGN045NE4SL

Package

DFN5x6 GN045NE4SL

Marking

Pin 1

Absolute Maximum Ratings at T_j=25℃ (unless otherwise specified)

Parameter

Symbol

Conditions

Value

Unit

101

T_C=25℃

T_C=100℃

Continuous Drain Current (Silicon Limited)

I_D

Continuous Drain Current (Package Limited)

Drain to Source Voltage

Gate to Source Voltage

Pulsed Drain Current

Avalanche Energy, Single Pulse

Power Dissipation

±20

220

T_C=25℃

L=0.3mH, T_C=25℃

T_C=25℃

℃

V_DS

V_GS

I_DM

E_AS

P_D

-55 to150

Operating and Storage Temperature

T_J, T_stg

Absolute Maximum Ratings

Parameter

Thermal Resistance Junction-Case

Thermal Resistance Junction-Ambient

Symbol

R_θJC

R_θJA

Max

1.5

Unit

℃/W

Prelim

May.2016

12 3 4 5 6

中文翻译

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