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HFM308B-W PDF预览

HFM308B-W

更新时间: 2024-12-01 12:59:39
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RECTRON 整流二极管功效
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HFM308B-W 数据手册

 浏览型号HFM308B-W的Datasheet PDF文件第2页 
HFM301  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
HFM308  
SURFACE MOUNT GLASS PASSIVATED  
HIGH EFFICIENCY SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes  
FEATURES  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.24 gram  
DO-214AB  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
HFM301 HFM302 HFM303 HFM304 HFM305 HFM306 HFM307 HFM308  
UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Volts  
50  
35  
50  
100  
70  
200  
140  
200  
600  
420  
600  
V
RRM  
RMS  
300  
210  
300  
400  
280  
400  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
V
DC  
100  
1000  
I
O
3.0  
Amps  
Amps  
at TA  
= 50oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
200  
70  
150  
50  
Typical Junction Capacitance (Note 2)  
C
J
pF  
0C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-65 to + 175  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
UNITS  
Volts  
CHARACTERISTICS  
Maximum Forward Voltage at 3.0A DC  
Maximum Full Load Reverse Current, Full cycle Average  
SYMBOL  
HFM301 HFM302 HFM303 HFM304 HFM305 HFM306 HFM307 HFM308  
1.7  
VF  
1.0  
1.3  
50  
TA  
= 55oC  
uAmps  
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
@T  
@T  
A
= 25oC  
10  
uAmps  
uAmps  
I
R
A
= 125oC  
150  
Maximum Reverse Recovery Time (Note 1)  
trr  
50  
75  
nSec  
NOTES : 1. Test Conditions: I  
F
=0.5A, I  
R=1.0A, IRR=0.25A.  
1998-8  
2. Measured at 1 MH  
Z
and applied reverse voltage of 4.0 volts.  
Back  

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