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HFM502

更新时间: 2024-12-01 21:09:23
品牌 Logo 应用领域
RECTRON 功效光电二极管
页数 文件大小 规格书
3页 31K
描述
Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-214AB,

HFM502 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.45
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HFM502 数据手册

 浏览型号HFM502的Datasheet PDF文件第2页浏览型号HFM502的Datasheet PDF文件第3页 
HFM501  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
HFM508  
SURFACE MOUNT GLASS PASSIVATED  
HIGH EFFICIENCY SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 5.0 Amperes  
FEATURES  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.24 gram  
DO-214AB  
DATA MECHANICAL  
* Epoxy : Device has UL flammability classification 94V-0  
(
)
0.125 3.17  
(
)
)
0.245 6.22  
(
)
0.115 2.92  
(
0.220 5.59  
(
)
0.280 7.11  
(
)
0.260 6.60  
(
)
0.012 0.305  
(
)
0.006 0.152  
(
)
0.103 2.62  
(
)
0.079 2.06  
(
)
0.060 1.52  
(
)
)
0.008 0.203  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
)
0.030 0.76  
(
0.004 0.102  
(
)
)
0.320 8.13  
(
0.305 7.75  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
HFM501 HFM502 HFM503 HFM504 HFM505 HFM506 HFM507 HFM508 UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Volts  
50  
35  
50  
100  
70  
200  
140  
200  
600  
420  
600  
V
RRM  
RMS  
300  
210  
300  
400  
280  
400  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
V
DC  
100  
1000  
I
O
5.0  
Amps  
Amps  
at TA  
= 50oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
200  
70  
150  
50  
Typical Junction Capacitance (Note 2)  
C
J
pF  
0C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-65 to + 175  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
UNITS  
Volts  
CHARACTERISTICS  
Maximum Forward Voltage at 5.0A DC  
Maximum Full Load Reverse Current, Full cycle Average  
SYMBOL  
HFM501 HFM502 HFM503 HFM504 HFM505 HFM506 HFM507 HFM508  
1.7  
VF  
1.0  
1.3  
50  
TA  
= 55oC  
uAmps  
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
@T  
@T  
A
= 25oC  
10  
uAmps  
uAmps  
I
R
A
= 125oC  
150  
Maximum Reverse Recovery Time (Note 1)  
trr  
50  
75  
nSec  
NOTES : 1. Test Conditions: I  
F
=0.5A, I  
R=-1.0A, IRR=-0.25A.  
2002-5  
2. Measured at 1 MH  
Z
and applied reverse voltage of 4.0 volts.  

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