Datasheet > HFM505

HFM505

更新时间： 2024-10-01 02:57:55

品牌	Logo	应用领域
森美特 - SUNMATE		功效光电二极管
页数	文件大小	规格书
2页	422K
描述
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES

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中文翻译

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HFM505 数据手册

HFM501 - HFM508

SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 5.0 A

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Low Power Loss

Ultra-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMC/DO-214AB

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

Mechanical Data

Case: SMC/DO-214AB, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.21 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol HFM501 HFM502 HFM503 HFM504 HFM505

Unit

HFM506

HFM508

HFM507

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

210

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

@T_L= 55°C

5.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

100

Forward Voltage

@I_F= 5.0A

V^FM

I^RM

t^rr

1.0

1.4

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

300

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

°C/W

°C

Operating and Storage Temperature Range

T^j,T^STG

-50 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. P.C.B. mounted with 0.2x0.2”

(5.0x5.0mm) copper pad areas

1 of 2

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中文翻译

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与HFM505相关器件

型号	品牌	获取价格	描述	数据表
HFM505B	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
HFM506	SUNMATE	获取价格	SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES
HFM506	RECTRON	获取价格	Reverse Voltage Vr : 600 V;Forward Current Io : 5.0 A;Max Surge Current : 150 A;Forward Vo
HFM506B	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
HFM506-W	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-214AB,
HFM507	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon, DO-214AB,
HFM507	SUNMATE	获取价格	SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES
HFM507B	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
HFM508	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
HFM508	SUNMATE	获取价格	SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES

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