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HFM501 PDF预览

HFM501

更新时间: 2024-02-21 08:34:59
品牌 Logo 应用领域
森美特 - SUNMATE 功效光电二极管
页数 文件大小 规格书
2页 422K
描述
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES

HFM501 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.68应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.05 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HFM501 数据手册

 浏览型号HFM501的Datasheet PDF文件第2页 
HFM501 - HFM508  
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 5.0 A  
Features  
!
Glass Passivated Die Construction  
!
!
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop, High Efficiency  
!
!
!
Low Power Loss  
Ultra-Fast Recovery Time  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
SMC/DO-214AB  
B
Dim  
Min  
5.59  
6.60  
2.75  
0.15  
7.75  
0.10  
0.76  
2.00  
Max  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
A
B
C
D
E
G
H
J
6.22  
7.11  
3.18  
0.31  
8.13  
0.20  
1.52  
2.62  
Mechanical Data  
A
C
!
!
Case: SMC/DO-214AB, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
D
!
Polarity: Cathode Band or Cathode Notch  
J
!
!
Marking: Type Number  
Weight: 0.21 grams (approx.)  
G
H
E
All Dimensions in mm  
TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol HFM501 HFM502 HFM503 HFM504 HFM505  
Unit  
HFM506  
HFM508  
HFM507  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
300  
210  
400  
280  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TL = 55°C  
5.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
100  
A
Forward Voltage  
@IF = 5.0A  
VFM  
IRM  
trr  
1.0  
1.4  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
300  
µA  
Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
50  
15  
75  
12  
nS  
pF  
j
C
R
JL  
15  
°C/W  
°C  
Operating and Storage Temperature Range  
Tj, TSTG  
-50 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. P.C.B. mounted with 0.2x0.2”  
(5.0x5.0mm) copper pad areas  
1 of 2  
www.sunmate.tw  

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Reverse Voltage Vr : 200 V;Forward Current Io : 5.0 A;Max Surge Current : 200 A;Forward Vo