Datasheet > HFM501

HFM501

更新时间： 2024-12-03 02:57:55

品牌	Logo	应用领域
森美特 - SUNMATE		功效光电二极管
页数	文件大小	规格书
2页	422K
描述
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES

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中文翻译

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HFM501 数据手册

HFM501 - HFM508

SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 5.0 A

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Low Power Loss

Ultra-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMC/DO-214AB

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

Mechanical Data

Case: SMC/DO-214AB, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.21 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol HFM501 HFM502 HFM503 HFM504 HFM505

Unit

HFM506

HFM508

HFM507

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

210

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

@T_L= 55°C

5.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

100

Forward Voltage

@I_F= 5.0A

V^FM

I^RM

t^rr

1.0

1.4

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

300

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

°C/W

°C

Operating and Storage Temperature Range

T^j,T^STG

-50 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. P.C.B. mounted with 0.2x0.2”

(5.0x5.0mm) copper pad areas

1 of 2

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中文翻译

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与HFM501相关器件

型号	品牌	获取价格	描述	数据表
HFM501B	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
HFM501B-T	RECTRON	获取价格	Rectifier Diode,
HFM501B-T-HF	RECTRON	获取价格	暂无描述
HFM501-T	RECTRON	获取价格	Rectifier Diode,
HFM502	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-214AB,
HFM502	SUNMATE	获取价格	SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES
HFM502B	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
HFM502-W	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-214AB,
HFM503	SUNMATE	获取价格	SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES
HFM503	RECTRON	获取价格	Reverse Voltage Vr : 200 V;Forward Current Io : 5.0 A;Max Surge Current : 200 A;Forward Vo

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