Datasheet > HFD1N60S

HFD1N60S

更新时间： 2022-12-18 01:18:16

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	719K
描述
600V N-Channel MOSFET

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HFD1N60S 数据手册

Typical Characteristics (continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

∗ Note :

1. V_GS= 10 V

2. I_D= 0.5 A

-100

-50

100

150

200

T_J, Junction Temperature [^oC]

Figure 8. On-Resistance Variation

vs Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Operation in This Area

is Limited by R _DS(on)

1.0

0.8

0.6

0.4

0.2

0.0

100 µs

1 ms

10⁰

10 ms

100 ms

* Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

-1

10⁰

10¹

10²

10³

V_DS, Drain-Source Voltage [V]

100

125

150

T_C, Case Temperature [^oC]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

D=0.5

10⁰

0.2

* Notes :

1. Z_θJC(t) = 4.53 ^oC/W Max.

2. Duty Factor, D=t₁/t₂

3. T_JM- T_C= P_DM* Z_θJC(t)

0.1

0.05

0.02

-1 0.01

single pulse

P_DM

t₁

t₂

-2

-5

-4

-3

-2

-1

10⁰

10¹

t₁, Square Wave Pulse Duration [sec]

Figure 11. Transient Thermal Response Curve

◎ SEMIHOW REV.A0,Sep 2009

1 2 345 6 7 8

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