Datasheet > HFD1N60S

HFD1N60S

更新时间： 2022-12-18 01:18:16

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	719K
描述
600V N-Channel MOSFET

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数据手册

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HFD1N60S 数据手册

Typical Characteristics

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

V_GS= 10V

V_GS= 20V

* Note : T_J= 25^oC

0.0

0.5

1.0

1.5

2.0

2.5

I_D, Drain Current[A]

V_SD, Source-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

250

200

150

100

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C_gd

V_DS= 120V

V_DS= 300V

V_DS= 480V

iss

C_oss

Note ;

1. V_GS= 0 V

2. f = 1 MHz

rss

* Note : I_D= 1A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

◎ SEMIHOW REV.A0,Sep 2009

1 234 5 6 7 8

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