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HFD1N60S PDF预览

HFD1N60S

更新时间: 2022-12-18 01:18:16
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SEMIHOW /
页数 文件大小 规格书
8页 719K
描述
600V N-Channel MOSFET

HFD1N60S 数据手册

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Electrical Characteristics TC=25 °C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max Units  
On Characteristics  
VGS  
--  
Gate Threshold Voltage  
V
DS = VGS, ID = 250 ㎂  
2.0  
--  
4.0  
12  
V
RDS(ON) Static Drain-Source  
On-Resistance  
V
GS = 10 V, ID = 0.5 A  
10  
Off Characteristics  
BVDSS  
Drain-Source Breakdown Voltage  
V
GS = 0 V, ID = 250 ㎂  
ID = 250 ㎂, Referenced to25℃  
DS = 600 V, VGS = 0 V  
600  
--  
--  
--  
--  
V
ΔBVDSS Breakdown Voltage Temperature  
0.6  
V/℃  
/ΔTJ  
Coefficient  
IDSS  
V
--  
--  
--  
--  
1
Zero Gate Voltage Drain Current  
VDS = 480 V, TC = 125℃  
10  
IGSSF  
IGSSR  
Gate-Body Leakage Current,  
Forward  
VGS = 30 V, VDS = 0 V  
--  
--  
--  
--  
100  
Gate-Body Leakage Current,  
Reverse  
VGS = -30 V, VDS = 0 V  
-100  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
--  
--  
--  
130  
22  
170  
29  
VDS = 25 V, VGS = 0 V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
5.0  
6.5  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Time  
--  
--  
--  
--  
--  
--  
--  
7
24  
52  
36  
64  
4.0  
--  
VDS = 300 V, ID = 1 A,  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
21  
13  
27  
3.0  
0.5  
1.3  
RG = 25 Ω  
(Note 4,5)  
Qg  
Qgs  
Qgd  
nC  
nC  
nC  
VDS = 480 V, ID = 1 A,  
VGS = 10 V  
(Note 4,5)  
--  
Source-Drain Diode Maximum Ratings and Characteristics  
IS  
Continuous Source-Drain Diode Forward Current  
Pulsed Source-Drain Diode Forward Current  
--  
--  
--  
--  
--  
--  
--  
1.0  
4.0  
1.4  
--  
A
ISM  
VSD  
trr  
Source-Drain Diode Forward Voltage IS = 1 A, VGS = 0 V  
--  
V
Reverse Recovery Time  
IS = 1 A, VGS = 0 V  
190  
0.53  
μC  
diF/dt = 100 A/μs (Note 4)  
Reverse Recovery Charge  
--  
Qrr  
Notes ;  
1. Repetitive Rating : Pulse width limited by maximum junction temperature  
2. L=59mH, IAS=1.0A, VDD=50V, RG=25, Starting TJ =25°C  
3. ISD≤1.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C  
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%  
5. Essentially Independent of Operating Temperature  
SEMIHOW REV.A0,Sep 2009  

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