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HFA08TB60S

更新时间： 2024-11-29 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 二极管超快软恢复二极管
页数 文件大小 规格书
6页 136K
描述
Ultrafast Soft Recovery Diode, 8 A

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中文翻译

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HFA08TB60S 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：R-PSSO-G2
针数：3Reach Compliance Code：unknown
HTS代码：8541.10.00.80风险等级：5.75
其他特性：LOW NOISE应用：ULTRA FAST SOFT RECOVERY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2.1 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
最大非重复峰值正向电流：60 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.055 µs子类别：Rectifier Diodes
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

HFA08TB60S 数据手册

 浏览型号HFA08TB60S的Datasheet PDF文件第2页浏览型号HFA08TB60S的Datasheet PDF文件第3页浏览型号HFA08TB60S的Datasheet PDF文件第4页浏览型号HFA08TB60S的Datasheet PDF文件第5页浏览型号HFA08TB60S的Datasheet PDF文件第6页 
HFA08TB60S  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 8 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
cathode  
BENEFITS  
• Reduced RFI and EMI  
+
2
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
Anode  
1
3
N/C  
-
DESCRIPTION  
D2PAK  
HFA08TB60S is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 8 A continuous current, the  
HFA08TB60S is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA08TB60S is ideally  
suited for applications in power supplies (PFC boost diode)  
and power conversion systems (such as inverters), motor  
drives, and many other similar applications where high  
speed, high efficiency is needed.  
PRODUCT SUMMARY  
VR  
VF at 8 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
8 A  
t
rr (typical)  
18 ns  
TJ (maximum)  
Qrr (typical)  
dI(rec)M/dt (typical)  
IRRM  
150 °C  
65 nC  
240 A/µs  
5.0 A  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
8.0  
IFSM  
IFRM  
60  
A
Maximum repetitive forward current  
24  
TC = 25 °C  
36  
14  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93045  
Revision: 22-Oct-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1
123456

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