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HFA08TB60STRRPBF PDF预览

HFA08TB60STRRPBF

更新时间: 2024-11-27 19:59:47
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
8页 273K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3

HFA08TB60STRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.68
其他特性:LOW NOISE应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.055 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

HFA08TB60STRRPBF 数据手册

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PD-96037  
HFA08TB60SPbF  
HEXFREDTM  
Ultrafast, Soft Recovery Diode  
Features  
• Ultrafast Recovery  
• Ultrasoft Recovery  
• Very Low IRRM  
• Very Low Qrr  
• Specified at Operating Conditions  
• Lead-Free  
VR = 600V  
(K)  
BASE  
+
2
VF(typ.)* = 1.4V  
IF(AV) = 8.0A  
Qrr (typ.)= 65nC  
IRRM = 5.0A  
Benefits  
trr(typ.) = 18ns  
3
_
1
(N/C)  
(A)  
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and Switching  
Transistor  
-
-
di(rec)M/dt (typ.) = 240A/µs  
• Higher Frequency Operation  
• Reduced Snubbing  
• Reduced Parts Count  
Description  
International Rectifier's HFA08TB60S is a state of the art ultra fast recovery diode.  
Employing the latest in epitaxial construction and advanced processing techniques  
it features a superb combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available. With basic ratings of 600  
volts and 8 amps continuous current, the HFA08TB60S is especially well suited for  
use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast  
recovery time, the HEXFRED product line features extremely low values of peak  
recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the  
D2 Pak  
tb portion of recovery. The HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in both the diode and the  
switching transistor. These HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is  
ideally suited for applications in power supplies (PFC Boost diode) and power  
conversion systems (such as inverters), motor drives, and many other similar  
applications where high speed, high efficiency is needed.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VR  
Cathode-to-AnodeVoltage  
600  
8.0  
60  
V
IF @ TC = 100°C  
IFSM  
ContinuousForwardCurrent  
Single Pulse Forward Current  
MaximumRepetitiveForwardCurrent  
MaximumPowerDissipation  
A
IFRM  
24  
PD @ TC = 25°C  
36  
W
°C  
PD @ TC = 100°C MaximumPowerDissipation  
14  
TJ  
OperatingJunctionand  
-55 to +150  
TSTG  
StorageTemperatureRange  
* 125°C  
10/07/05  
www.vishay.com  
1
Document Number: 94048  

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