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HFA08TB60STRL PDF预览

HFA08TB60STRL

更新时间: 2024-11-29 13:02:11
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
6页 135K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, D2PAK-3

HFA08TB60STRL 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-263包装说明:D2PAK-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.29Is Samacsys:N
其他特性:LOW NOISE应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.055 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HFA08TB60STRL 数据手册

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HFA08TB60  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 8 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
cathode  
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
1
3
Cathode Anode  
DESCRIPTION  
HFA08TB60 is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 8 A continuous current, the HFA08TB60  
is especially well suited for use as the companion diode for  
IGBTs and MOSFETs. In addition to ultrafast recovery time,  
the HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED HFA08TB60 is ideally suited for applications in  
power supplies and power conversion systems (such as  
inverters), motor drives, and many other similar applications  
where high speed, high efficiency is needed.  
TO-220AC  
PRODUCT SUMMARY  
VR  
VF at 8 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
8 A  
t
rr (typical)  
TJ (maximum)  
rr (typical)  
18 ns  
150 °C  
65 nC  
240 A/µs  
5.0 A  
Q
dI(rec)M/dt (typical)  
IRRM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
8.0  
IFSM  
IFRM  
60  
A
Maximum repetitive forward current  
24  
TC = 25 °C  
36  
14  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93044  
Revision: 30-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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