HFA08TB60STRLPBF

更新时间： 2024-11-27 12:58:35

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
6页	186K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HFA08TB60STRLPBF 数据手册

Bulletin PD -2.341 rev. A 11/00

HFA08TB60

Ultrafast, Soft Recovery Diode

HEXFRED

BASE

CATHODE

V_R= 600V

V_F(typ.)* = 1.4V

I_F(AV)= 8.0A

Q_rr(typ.)= 65nC

I_RRM= 5.0A

Features

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

• Very Low Q_rr

• Specified at Operating Conditions

Benefits

t_rr(typ.) = 18ns

di_(rec)M/dt (typ.) = 240A/µs

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

CATHODE

ANODE

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description

International Rectifier's HFA08TB60 is a state of the art ultra fast recovery

diode. Employing the latest in epitaxial construction and advanced processing

techniques it features a superb combination of characteristics which result in

performance which is unsurpassed by any rectifier previously available. With

basic ratings of 600 volts and 8 amps continuous current, the HFA08TB60 is

especially well suited for use as the companion diode for IGBTs and MOSFETs.

In addition to ultra fast recovery time, the HEXFRED product line features

extremely low values of peak recovery current (I_RRM) and does not exhibit any

tendency to "snap-off" during the t_bportion of recovery. The HEXFRED features

combine to offer designers a rectifier with lower noise and significantly lower

switching losses in both the diode and the switching transistor. These HEXFRED

advantages can help to significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA08TB60 is ideally suited for applications in

power supplies and power conversion systems (such as inverters), motor

drives, and many other similar applications where high speed, high efficiency

is needed.

TO-220AC

Absolute Maximum Ratings

Parameter

Max

600

8.0

Units

V_R

Cathode-to-Anode Voltage

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

Operating Junction and

I_F@ T_C= 100°C

I_FSM

I_FRM

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

T_STG

- 55 to +150

Storage Temperature Range

* 125°C

1_4/8/97

12 3 4 5 6

中文翻译

下载PDF

与HFA08TB60STRLPBF相关器件

型号	品牌	获取价格	描述	数据表
HFA08TB60STRR	INFINEON	获取价格	暂无描述
HFA08TB60STRR	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, D2PAK-3
HFA08TB60STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3
HFA1-0001-2	ETC	获取价格	Analog IC
HFA1-0001-5	INTERSIL	获取价格	Ultra High Slew RateOperational Amplifier
HFA1-0001-9	INTERSIL	获取价格	Ultra High Slew RateOperational Amplifier
HFA1-0002-2	ETC	获取价格	Analog IC
HFA1-0002-5	ETC	获取价格	Analog IC
HFA1-0002-9	ETC	获取价格	Analog IC
HFA1-0003L-5	INTERSIL	获取价格	Ultra High Speed Comparator