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HERAF807G PDF预览

HERAF807G

更新时间: 2024-11-04 22:40:47
品牌 Logo 应用领域
TSC 整流二极管高效整流二极管功效局域网
页数 文件大小 规格书
2页 68K
描述
Isolation 8.0 AMPS. Glass Passivated High Efficient Rectifiers

HERAF807G 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:GREEN, PLASTIC, ITO-220AC, 2 PINReach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.41
Is Samacsys:N其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:0.08 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Pure Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

HERAF807G 数据手册

 浏览型号HERAF807G的Datasheet PDF文件第2页 
HERAF801G THRU HERAF808G  
Isolation 8.0 AMPS. Glass Passivated High Efficient Rectifiers  
Voltage Range  
50 to 1000 Volts  
Current  
8.0 Amperes  
ITO-220AC  
Features  
.185(4.7)  
.173(4.4)  
.406(10.3)  
.390(9.90)  
Low forward voltage drop  
High current capability  
High reliability  
.124(3.16)  
.118(3.00)  
.134(3.4)DIA  
.113(3.0)DIA  
.112(2.85)  
.100(2.55)  
.272(6.9)  
.248(6.3)  
High surge current capability  
.606(15.5)  
.583(14.8)  
Mechanical Data  
.063(1.6)  
MAX  
Cases: ITO-220AC molded plastic  
Epoxy: UL 94V-O rate flame retardant  
Terminals: Leads solderable per MIL-  
STD-202, Method 208 guaranteed  
Polarity: As marked  
High temperature soldering guaranteed:  
260oC/ 0.25” (6.35mm) from case for 10  
seconds  
.161(4.1)  
.146(3.7)  
.110(2.8)  
.098(2.5)  
.543(13.8)  
.512(13.2)  
.071(1.8)  
MAX  
2
PIN 1  
.100(2.55)  
.100(2.55)  
PIN 2  
Case Positive  
Mounting torque: 5 in – 1bs. Max.  
Weight: 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Rating and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF  
801G 802G 803G 804G 805G 806G 807G 808G  
Symbol  
Units  
Type Number  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50 100 200 300 400 600 800 1000  
V
V
V
VRRM  
VRMS  
VDC  
35  
70 140 210 280 420 560 700  
Maximum DC Blocking Voltage  
50 100 200 300 400 600 800 1000  
Maximum Average Forward Rectified  
Current .375”(9.5mm) Lead Length  
@TC =100  
8.0  
A
I(AV)  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
Maximum Instantaneous Forward Voltage  
@8.0A  
150  
A
V
IFSM  
1.0  
1.3  
10.0  
1.7  
VF  
IR  
Maximum DC Reverse Current @ TA=25℃  
uA  
uA  
nS  
pF  
/W  
at Rated DC Blocking Voltage @ TA=125℃  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance (Note 3)  
400  
Trr  
50  
80  
80  
60  
Cj  
RθJC  
2.0  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-65 to +150  
TSTG  
-65 to +150  
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate..  
- 292 -  

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