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HER2008GD PDF预览

HER2008GD

更新时间: 2024-11-06 00:55:55
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 621K
描述
20.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers

HER2008GD 数据手册

 浏览型号HER2008GD的Datasheet PDF文件第2页 
HER2001GD thru HER2008GD  
HER2001GD thru HER2008GD  
Pb Free Plating Product  
20.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers  
TO-220AB/TO-220-3L  
Unit : inch (mm)  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Polarity: As marked on diode body  
Mounting position: Any  
.1(2.54)  
.1(2.54)  
Case  
Case  
Case  
Case  
Negative  
Common Cathode Common Anode  
Suffix "G" Suffix "GA"  
Positive  
Doubler  
Series  
Tandem Polarity  
Tandem Polarity  
Weight: 2.2 gram approximately  
Suffix "GD"  
Suffix "GS"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
HER  
HER  
HER  
HER  
HER  
HER  
HER  
HER  
PARAMETER  
SYMBOL  
UNIT  
2001GD 2002GD 2003GD 2004GD 2005GD 2006GD 2007GD 2008GD  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current(total device)  
IF(AV)  
20  
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
200  
A
V
Maximum instantaneous forward voltage (Note 1)  
@ 10 A(per leg)  
VF  
1.0  
1.3  
1.7  
TJ=25°C  
Maximum reverse current @ rated VR  
TJ=125°C  
5.0  
IR  
μA  
100  
Maximum reverse recovery time (Note 2)  
Typical junction capacitance (Note 3)  
Typical thermal resistance  
trr  
CJ  
50  
80  
80  
50  
ns  
pF  
RθJC  
TJ  
1.5  
°C/W  
°C  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  

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