5秒后页面跳转
HCT700 PDF预览

HCT700

更新时间: 2024-01-29 09:57:16
品牌 Logo 应用领域
SEME-LAB 晶体开关晶体管
页数 文件大小 规格书
2页 22K
描述
COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

HCT700 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-CDSO-N6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.76
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):100
JESD-30 代码:R-CDSO-N6元件数量:2
端子数量:6封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN AND PNP认证状态:Not Qualified
参考标准:MIL表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
晶体管元件材料:SILICON最大关闭时间(toff):300 ns
最大开启时间(吨):35 nsBase Number Matches:1

HCT700 数据手册

 浏览型号HCT700的Datasheet PDF文件第2页 
HCT700  
S E M E  
LA B  
MECHANICAL DATA  
Dimensions in mm (inches)  
COMPLEMENTARY  
LCC2 – Ceramic Surface Mount Package  
SWITCHING TRANSISTORS IN A  
HERMETICALLY SEALED  
CERAMIC SURFACE MOUNT  
PACKAGE FOR HIGH RELIABILITY  
APPLICATIONS  
FEATURES  
1.40 ± 0.15  
(0.055 ± 0.006)  
2.29 ± 0.20  
(0.09 ± 0.008)  
1.65 ± 0.13  
(0.065 ± 0.005)  
• SILICON PLANAR EPITAXIAL NPN /PNP  
TRANSISTORS  
2
1
6
3
4
• HERMETIC CERAMIC SURFACE MOUNT  
PACKAGE  
A
• CECC SCREENING OPTIONS  
0.23  
(0.009)  
5
rad.  
• SPACE QUALITY LEVELS OPTIONS  
• HIGH SPEED SATURATED SWITCHING  
1.27 ± 0.13  
(0.05 ± 0.005)  
A =  
6.22 ± 0.13  
(0.245 ± 0.005)  
Pin  
1
Pin  
4
DESCRIPTION  
COLL ECT OR  
COLL ECT OR  
Hermetically sealed surface mount complementary  
transistor pair.  
The HCT700 transistor die have similar electrical  
characteristics to the 2N2222A on the NPN side and  
the 2N2907A on the PNP side.  
Pin  
EMITT ER  
6
Pin  
BASE  
2
Pin  
BASE  
3
Pin  
EMI TT ER  
5
The HCT700 is ideal for high reliability and space  
applications requiring small size and low weight  
devices.  
ABSOLUTE MAXIMUM RATINGS  
(T  
= 25°C unless otherwise stated)  
Collector – Base Voltage  
Collector – Emitter Voltage  
Emitter – Base Voltage  
NPN  
75  
PNP  
60  
case  
CBO  
CEO  
EBO  
V
V
V
50  
6.0  
60  
5.0  
800mA  
600mA  
I
Continuous Collector Current  
C
0.4W  
2.0W  
P
P
Power Dissipation @ T  
Power Dissipation @ T  
Derate above 25°C  
= 25°C  
D
D
amb  
= 25°C  
substrate  
11.4mW / °C  
500V  
NPN to PNP Isolation Voltage  
–65 to +200°C  
215°C  
T , T  
Operating and Storage Temperature Range  
Soldering temperature (Vapour phase reflow for 30 sec)  
Soldering temperature (Heated collet for 5 sec)  
J
stg  
T
T
L
260°C  
L
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 4/94  

与HCT700相关器件

型号 品牌 描述 获取价格 数据表
HCT7000 ETC N- Channel En hance ment Mode MOS Transistor

获取价格

HCT7000M TTELEC MOSFET N-CH 60V 200MA

获取价格

HCT7000M N- Channel Enhancement Mode MOS Transis tor

获取价格

HCT7000MTX TTELEC MOSFET N-CH 60V 200MA

获取价格

HCT7000MTX N- Channel Enhancement Mode MOS Transis tor

获取价格

HCT7000MTXV N- Channel Enhancement Mode MOS Transis tor

获取价格