Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Features:
6 pad surface mount package
VDS = 90V
RDS(on) < 5Ω
ID(on) N-Channel = 1.5A | P-Channel = 1.1A
Two devices selected for VDS ID(on) and RDS(on) similarity
Full TX Processing Available
Gold plated contacts
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeꢀc ceramic surface mount package. The devices used
are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode
MOSFETS are parꢀcularly well matched for VDS, IDS(on), RDS(on) and Gfs.
TX and TXV devices are processed to OPTEK’s military screening program paꢀerned aꢁer MIL‐PRF‐19500.
TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C.
VDSS
Min
ID(ON) (mA)
Min
Gfs (ms)
Min
t(ON) / t(OFF) (ns)
Max
Part
Number
Sensor Type
Package
Applications:
Drivers: Solid State
Relays, Lamps,
HCT801
HCT801TX
HCT801TXV
N & P ‐Channel
Enhancement
MOSFET
Solenoids, Displays,
90
1.5 & ‐1.1 170 & 200
15/17 & 50/50 6‐pin Ceramic
Memories, etc.
Motor Control
Power Supply
Circuits
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue A 11/2016 Page 1
© TT electronics plc