Datasheet > HCT7000MTX

HCT7000MTX

更新时间： 2023-12-06 20:00:23

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TTELEC		/
页数	文件大小	规格书
2页	391K
描述
MOSFET N-CH 60V 200MA

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数据手册

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HCT7000MTX 数据手册

N-Channel Enhancement Mode MOS

Transistor

HCT7000M, HCT70000MTX, HCT7000MTXV

Features:

•

200 mA I_D

Ultra small surface mount package

R_DS(ON)< 5Ω

Pin-out compaꢁble with most SOT23 MOSFETS

Description:

The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin

ceramic LCC package. Electrical characterisꢁcs are similar to those of the JEDEC 2N7000. The pin-out and footprint matches

that of most enhancement mode MOS transistors built in SOT23 plasꢁc packages.

TX and TXV devices are processed to OPTEK’s military screening program paꢀerned aꢁer MIL-PRF-19500.

TX products receive a V_GSHTRB at 24 V for 48 hrs. at 150° C and a V_DSHTRB at 48 V for 260 hrs.at 150° C.

V_DSS

Min

V_GS(TH)Min/ I_D(ON)(mA) G_fs(ms) t_(ON)/ t_(OFF)(ns)

Part

Number

Sensor Type

Package

Applications:

Max

Min

Max

•

Switching applicaꢁons:

HCT7000M

HCT7000MTX

HCT7000MTXV

small servo motor

control, power

MOSFET gate drives

Relay Drivers

High Speed Line

Drivers

N-Channel

Enhanced

MOSFET

0.8 / 3.0

100

10 / 10

3-pin Ceramic

•

Power Supplies

General Note

TT Electronics | OPTEK Technology

2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200

TT Electronics reserves the right to make changes in product speciﬁcaꢁon without

noꢁce or liability. All informaꢁon is subject to TT Electronics’ own data and is

considered accurate at ꢁme of going to print.

www.ꢀelectronics.com | sensors@ꢀelectronics.com

Issue A 11/2016 Page 1

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