Datasheet > HB56UW432D-6

HB56UW432D-6

更新时间： 2024-09-09 23:54:47

品牌	Logo	应用领域
其他 - ETC		内存集成电路动态存储器
页数	文件大小	规格书
26页	329K
描述
x32 EDO Page Mode DRAM Module

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数据手册

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HB56UW432D-6 数据手册

HB56UW232D Series

HB56UW432D Series

2,097,152-word × 32-bit High Density Dynamic RAM Module

4,194,304-word × 32-bit High Density Dynamic RAM Module

ADE-203-784A (Z)

Rev.1.0

May. 20, 1997

Description

The HB56UW232D is a 2M × 32 dynamic RAM Small Outline Dual In-line Memory Module

(S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W17805) sealed in TSOP package. The

HB56UW432D is a 4M × 32 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM),

mounted 8 pieces of 16-Mbit DRAM (HM51W17805) sealed in TSOP package. The HB56UW232D,

HB56UW432D offer Extended Data Out (EDO) page mode as a high speed access mode. An outline of the

HB56UW232D, HB56UW432D is 72-pin Zig Zag Dual tabs socket type compact and thin package.

Therefore, the HB56UW232D, HB56UW432D make high density mounting possible without surface

mount technology. The HB56UW232D, HB56UW432D provide common data inputs and outputs.

Decoupling capacitors are mounted on the module board.

Features

•

72-pin Zig Zag Dual tabs socket type

Outline: 59.69 mm (Length) × 25.40 mm (Height) × 2.42/3.80 mm (Thickness)

Lead pitch: 1.27 mm

•

Single 3.3 V (±0.3 V) supply

High speed

Access time: t_RAC= 50/60/70 ns (max)

t_CAC= 13/15/18 ns (max)

•

Low power dissipation

Active mode: 1.59/1.44/1.30 W (max) (HB56UW232D Series)

1.66/1.51/1.36 W (max) (HB56UW432D Series)

Standby mode (TTL): 28.8/57.6 mW (max)

(CMOS): 2.16/4.32 mW (max) (L-version)

EDO page mode capability

•

Refresh period

2048 refresh cycles: 32 ms

128 ms (L-version)

•

4 variations of refresh

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