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HB52RD649DC-A6B PDF预览

HB52RD649DC-A6B

更新时间: 2024-09-16 22:25:51
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器
页数 文件大小 规格书
16页 463K
描述
512MB Unbuffered SDRAM S.O.DIMM

HB52RD649DC-A6B 数据手册

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DATA SHEET  
512MB Unbuffered SDRAM S.O.DIMM  
HB52RF649DC-B (64M words × 72 bits, 2 bank)  
HB52RD649DC-B (64M words × 72 bits, 2 bank)  
Description  
Features  
The HB52RF649DC, HB52RD649DC are a 64M × 72 ×  
2 banks Synchronous Dynamic RAM Small Outline  
Dual In-line Memory Module (S.O.DIMM), mounted 18  
pieces of 256M bits SDRAM sealed in TCP package  
and 1 piece of serial EEPROM (2k bits) for Presence  
Detect (PD). An outline of the products is 144-pin Zig  
Zag Dual tabs socket type compact and thin package.  
Therefore, they make high density mounting possible  
Fully compatible with: JEDEC standard outline 8  
bytes S.O.DIMM  
144-pin Zig Zag Dual tabs socket type (dual lead out)  
PCB height: 33.02mm (1.30inch)  
Lead pitch: 0.80mm  
3.3V power supply  
Clock frequency: 133MHz/100MHz (max.)  
LVTTL interface  
Data bus width: × 72 ECC  
Single pulsed /RAS  
4 Banks can operates simultaneously and  
independently  
without surface mount technology.  
common data inputs and outputs.  
They provide  
Decoupling  
capacitors are mounted beside TCP on the module  
board.  
Note: Do not push the cover or drop the modules in  
order to protect from mechanical defects, which  
would be electrical defects.  
Burst read/write operation and burst read/single write  
operation capability  
Programmable burst length (BL): 1, 2, 4, 8  
2 variations of burst sequence  
Sequential  
Interleave  
Programmable /CE latency (CL): 2, 3  
Byte control by DQMB  
Refresh cycles: 8192 refresh cycles/64ms  
2 variations of refresh  
Auto refresh  
Self refresh  
Low self refresh current  
: HB52RF649DC-xxBL (L-version)  
: HB52RD649DC-xxBL (L-version)  
Document No. E0223H30 (Ver. 3.0)  
Date Published April 2002 (K) Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2001-2002  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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