Datasheet > HB52RD168GB-F

HB52RD168GB-F

更新时间： 2024-11-07 05:34:51

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器 PC
页数	文件大小	规格书
22页	108K
描述
128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 100 MHz Memory Bus, 1-Bank Module (16 pcs of 16 M × 4 components) PC100 SDRAM

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HB52RD168GB-F 数据手册

HB52RD168GB-F

128 MB Unbuffered SDRAM Micro DIMM

16-Mword × 64-bit, 100 MHz Memory Bus, 1-Bank Module

(16 pcs of 16 M × 4 components)

PC100 SDRAM

E0009H10 (1st edition)

(Previous ADE-203-1153A (Z))

Jan. 19, 2001

Description

The HB52RD168GB is a 16M × 64 × 1 bank Synchronous DynamicRAMMicro Dual In-lineMemory Module

(Micro DIMM), mounted 16 pieces of 64-Mbit SDRAM (HM5264405FTB) sealed in TCP packageand 1 piece

of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of the product is 144-pin Zig Zag

Dual tabs socket type compact and thin package. Therefore, it makes high density mounting possible without

surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are mounted

beside TCP on the module board.

Note: Do not push the cover or drop the modules in order to protect from mechanicaldefects,which wouldbe

electrical defects.

Features

•

144-pin Zig Zag Dual tabs socket type

Outline: 38.00 mm (Length) × 30.00 mm (Height) × 3.80 mm (Thickness)

Lead pitch: 0.50 mm

•

3.3 V power supply

Clock frequency: 100 MHz (max)

LVTTL interface

Data bus width: × 64 Non parity

Single pulsed RAS

4 Banks can operates simultaneously and independently

Burst read/write operation and burst read/single write operation capability

Programmable burst length : 1/2/4/8/full page

This Product became EOL in October, 2005.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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