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HB52RD328GB-B6B PDF预览

HB52RD328GB-B6B

更新时间: 2024-09-17 05:34:51
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器
页数 文件大小 规格书
16页 141K
描述
256MB Unbuffered SDRAM Micro DIMM

HB52RD328GB-B6B 数据手册

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PRELIMINARY DATA SHEET  
256MB Unbuffered SDRAM Micro DIMM  
HB52RF328GB-B (32M words × 64 bits, 1 bank)  
HB52RD328GB-B (32M words × 64 bits, 1 bank)  
Description  
Features  
The HB52RF328GB and HB52RD328GB are a 32M ×  
64 × 1 banks Synchronous Dynamic RAM Micro Dual  
In-line Memory Module (Micro DIMM), mounted 8  
pieces of 256M bits SDRAM (HM522805BTB/BLTB)  
sealed in TCP package and 1 piece of serial EEPROM  
(2k bits EEPROM) for Presence Detect (PD). An  
outline of the products is 144-pin Zig Zag Dual tabs  
socket type compact and thin package. Therefore,  
they make high density mounting possible without  
surface mount technology. They provide common data  
144-pin Zig Zag Dual tabs socket type (dual lead out)  
Outline: 38.00mm (Length) × 30.00mm (Height) ×  
3.80mm (Thickness)  
Lead pitch: 0.50mm  
3.3V power supply  
Clock frequency: 133MHz/100MHz (max.)  
LVTTL interface  
Data bus width: × 64 Non parity  
Single pulsed /RAS  
inputs and outputs.  
Decoupling capacitors are  
4 Banks can operates simultaneously and  
independently  
mounted beside TCP on the module board.  
Burst read/write operation and burst read/single write  
operation capability  
Note: Do not push the cover or drop the modules in  
order to protect from mechanical defects, which  
would be electrical defects.  
Programmable burst length (BL): 1, 2, 4, 8  
2 variations of burst sequence  
Sequential  
Interleave  
Programmable /CE latency (CL): 2, 3  
Byte control by DQMB  
Refresh cycles: 8192 refresh cycles/64ms  
2 variations of refresh  
Auto refresh  
Self refresh  
Low self refresh current : HB52RF328GB-xxBL  
: HB52RD328GB-xxBL  
Document No. E0202H10 (Ver. 1.0)  
Date Published August 2001 (K)  
Printed in Japan  
This product became EOL in September, 2002.  
URL: http://www.elpida.com  
C
Elpida Memory, Inc. 2001  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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