是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | SOP |
包装说明: | 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.31 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.034 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 2.5 W |
最大脉冲漏极电流 (IDM): | 96 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 20 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HAT1038R | HITACHI |
获取价格 |
Silicon P Channel Power MOS FET High Speed Power Switching | |
HAT1038R | RENESAS |
获取价格 |
Silicon P Channel Power MOS FET High Speed Power Switching | |
HAT1038R/HAT1038RJ | ETC |
获取价格 |
||
HAT1038R_09 | RENESAS |
获取价格 |
Silicon P Channel Power MOS FET High Speed Power Switching | |
HAT1038R-EL-E | RENESAS |
获取价格 |
Silicon P Channel Power MOS FET High Speed Power Switching | |
HAT1038RJ | RENESAS |
获取价格 |
Silicon P Channel Power MOS FET High Speed Power Switching | |
HAT1038RJ | HITACHI |
获取价格 |
Silicon P Channel Power MOS FET High Speed Power Switching | |
HAT1038RJ-EL-E | RENESAS |
获取价格 |
Silicon P Channel Power MOS FET High Speed Power Switching | |
HAT1041T | RENESAS |
获取价格 |
Silicon P Channel Power MOS FET High Speed Power Switching | |
HAT1043 | HITACHI |
获取价格 |
Silicon P Channel Power MOS FET Power Switching |