生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.28 | 其他特性: | BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 5 A |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 0.12 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 20 W | 最大脉冲漏极电流 (IDM): | 10 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HAF2007(L)|HAF2007(S) | ETC |
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HAF2007(S) | HITACHI |
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Power Field-Effect Transistor, 5A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal | |
HAF2007(S) | RENESAS |
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5A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
HAF2007(S)-2 | HITACHI |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
HAF2007-90L | RENESAS |
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Silicon N Channel MOSFET Series Power Switching | |
HAF2007-90S | RENESAS |
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Silicon N Channel MOSFET Series Power Switching | |
HAF2007-90STL | RENESAS |
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Silicon N Channel MOSFET Series Power Switching | |
HAF2007-90STR | RENESAS |
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Silicon N Channel MOSFET Series Power Switching | |
HAF2007L | RENESAS |
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Silicon N Channel MOSFET Series Power Switching | |
HAF2007L | HITACHI |
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Silicon N Channel MOS FET Series Power Switching |