生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.3 |
其他特性: | BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 0.34 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 10 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HAF1004(S)-(2) | HITACHI |
获取价格 |
Transistor | |
HAF1004L | RENESAS |
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Silicon P Channel MOS FET Series Power Switching | |
HAF1004S | RENESAS |
获取价格 |
Silicon P Channel MOS FET Series Power Switching | |
HAF1008 | RENESAS |
获取价格 |
Silicon P Channel MOS FET Series Power Switching | |
HAF1008L | RENESAS |
获取价格 |
Silicon P Channel MOS FET Series Power Switching | |
HAF1008S | RENESAS |
获取价格 |
Silicon P Channel MOS FET Series Power Switching | |
HAF1009 | RENESAS |
获取价格 |
Silicon P Channel MOS FET Series Power Switching | |
HAF1009(L) | RENESAS |
获取价格 |
40A, 60V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-4 | |
HAF1009(L)|HAF1009(S) | ETC |
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HAF1009(S) | RENESAS |
获取价格 |
暂无描述 |