Datasheet > HAF1001

HAF1001

更新时间： 2024-02-28 16:53:45

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体开关晶体管脉冲电源开关局域网
页数	文件大小	规格书
8页	88K
描述
Silicon P Channel MOS FET Series Power Switching

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HAF1001 数据手册

HAF1001

Silicon P Channel MOS FET Series

Power Switching

REJ03G1132-0400

(Previous: ADE-208-583A)

Rev.4.00

Apr 27, 2006

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Features

•

Logic level operation (–4 to –6 V Gate drive)

High endurance capability against to the short circuit

Built-in the over temperature shut-down circuit

Latch type shut-down operation (Need 0 voltage recovery)

Outline

RENESAS Package code: PRSS0004AC-A

(Package name: TO-220AB)

Gate resistor

1. Gate

2. Drain

3. Source

4. Drain

Tempe-

rature

Sensing

Circuit

Gate

Latch

Circuit

Shut-

down

Circuit

Rev.4.00 Apr 27, 2006 page 1 of 7

12 3 4 5 6 7 8

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