Datasheet > HAF1002(L)|HAF1002(S)

HAF1002(L)|HAF1002(S)

更新时间： 2022-01-18 16:42:00

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HAF1002(L)|HAF1002(S) 数据手册

HAF1002(L), HAF1002(S)

Silicon P Channel MOS FET Series

Power Switching

ADE-208-586 (Z)

1st. Edition

October 1997

Features

This FET has the over temperature shut–down capability sensing to the junction temperature.

This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit

operation to shut–down the gate voltage in case of high junction temperature like applying over power

consumption, over current etc.

•

Logic level operation (–4 to –6 V Gate drive)

High endurance capability against to the short circuit

Built–in the over temperature shut–down circuit

Latch type shut–down operation (Need 0 voltage recovery)

Outline

LDPAK

Gate resistor

Tempe–

rature

Sencing

Circuit

Latch

Circuit

Gate

Shut–

down

Circuit

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
HAF1002(S)	RENESAS	获取价格	暂无描述
HAF1002(S)-(1)	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-263ABVAR
HAF1002(S)-(1)	HITACHI	获取价格	Transistor
HAF1002(S)-(2)	HITACHI	获取价格	Transistor
HAF1002-90L	RENESAS	获取价格	Silicon P Channel MOS FET Series Power Switching
HAF1002-90L-E	RENESAS	获取价格	15A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LDPAK-3
HAF1002-90S	RENESAS	获取价格	Silicon P Channel MOS FET Series Power Switching
HAF1002-90STL	RENESAS	获取价格	Silicon P Channel MOS FET Series Power Switching
HAF1002-90STR	RENESAS	获取价格	Silicon P Channel MOS FET Series Power Switching
HAF1002L	HITACHI	获取价格	Silicon P Channel MOS FET Series Power Switching