Datasheet > HAF1002(S)-(1)

HAF1002(S)-(1)

更新时间： 2024-02-15 07:32:00

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
7页	39K
描述
Transistor

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技术参数
数据手册

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HAF1002(S)-(1) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	15 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	50 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

HAF1002(S)-(1) 数据手册

HAF1002(L), HAF1002(S)

Silicon P Channel MOS FET Series

Power Switching

ADE-208-586 (Z)

1st. Edition

October 1997

Features

This FET has the over temperature shut–down capability sensing to the junction temperature.

This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit

operation to shut–down the gate voltage in case of high junction temperature like applying over power

consumption, over current etc.

•

Logic level operation (–4 to –6 V Gate drive)

High endurance capability against to the short circuit

Built–in the over temperature shut–down circuit

Latch type shut–down operation (Need 0 voltage recovery)

Outline

LDPAK

Gate resistor

Tempe–

rature

Sencing

Circuit

Latch

Circuit

Gate

Shut–

down

Circuit

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7

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