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H5TQ2G83AMP-G7C PDF预览

H5TQ2G83AMP-G7C

更新时间: 2024-09-13 20:44:51
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
73页 1498K
描述
DDR DRAM, 256MX8, CMOS, PBGA78, FBGA-78

H5TQ2G83AMP-G7C 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:BGA包装说明:LFBGA, BGA78,9X13,32
针数:78Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.73访问模式:MULTI BANK PAGE BURST
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):533 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B78
JESD-609代码:e1长度:11.6 mm
内存密度:2147483648 bit内存集成电路类型:DDR DRAM
内存宽度:8功能数量:1
端口数量:1端子数量:78
字数:268435456 words字数代码:256000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:256MX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装等效代码:BGA78,9X13,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度):260电源:1.5 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.35 mm自我刷新:YES
最大待机电流:0.02 A子类别:DRAMs
最大压摆率:0.32 mA最大供电电压 (Vsup):1.575 V
最小供电电压 (Vsup):1.425 V标称供电电压 (Vsup):1.5 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:20
宽度:8.4 mmBase Number Matches:1

H5TQ2G83AMP-G7C 数据手册

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H5TQ2G43AMP-xxC  
H5TQ2G83AMP-xxC  
2Gb DDR3 SDRAM DDP(1Gbx2)  
H5TQ2G43AMP-xxC  
H5TQ2G83AMP-xxC  
Rev. 0.3 / Feb 2009  
1
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  

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