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H5PS2562GFR-E3I PDF预览

H5PS2562GFR-E3I

更新时间: 2024-09-16 15:33:39
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
61页 1125K
描述
DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, 7.50 X 12.50 MM, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84

H5PS2562GFR-E3I 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA84,9X15,32
针数:84Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.24
风险等级:5.84访问模式:FOUR BANK PAGE BURST
最长访问时间:0.6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):200 MHzI/O 类型:COMMON
交错的突发长度:4,8JESD-30 代码:R-PBGA-B84
JESD-609代码:e1长度:12.5 mm
内存密度:268435456 bit内存集成电路类型:DDR DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:84
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA84,9X15,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260电源:1.8 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:4,8子类别:DRAMs
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:20宽度:7.5 mm
Base Number Matches:1

H5PS2562GFR-E3I 数据手册

 浏览型号H5PS2562GFR-E3I的Datasheet PDF文件第2页浏览型号H5PS2562GFR-E3I的Datasheet PDF文件第3页浏览型号H5PS2562GFR-E3I的Datasheet PDF文件第4页浏览型号H5PS2562GFR-E3I的Datasheet PDF文件第5页浏览型号H5PS2562GFR-E3I的Datasheet PDF文件第6页浏览型号H5PS2562GFR-E3I的Datasheet PDF文件第7页 
H5PS2562GFR Series  
256Mb DDR2 SDRAM  
H5PS2562GFR-xxC  
H5PS2562GFR-xxI  
H5PS2562GFR-xxL  
H5PS2562GFR-xxJ  
This document is a general product description and is subject to change without notice. SK hynix Inc. does not assume any responsi-  
bility for use of circuits described. No patent licenses are implied.  
Rev. 1.5 / Mar. 2014  
1

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