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H57V1262GFR-50J PDF预览

H57V1262GFR-50J

更新时间: 2024-11-29 18:47:47
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
12页 250K
描述
Synchronous DRAM, 2MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, FBGA-54

H57V1262GFR-50J 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA54,9X9,32
针数:54Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.82访问模式:FOUR BANK PAGE BURST
最长访问时间:4.5 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):200 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:S-PBGA-B54
JESD-609代码:e1长度:8 mm
内存密度:33554432 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA54,9X9,32
封装形状:SQUARE封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.002 A
子类别:DRAMs最大压摆率:0.21 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:20宽度:8 mm
Base Number Matches:1

H57V1262GFR-50J 数据手册

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128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O  
Document Title  
4Bank x 2M x 16bits Synchronous DRAM  
Revision History  
Revision No.  
History  
Initial Draft  
Release  
Draft Date  
Jul. 2009  
Remark  
0.1  
1.0  
Preliminary  
Aug. 2009  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev. 1.0 / Aug. 2009  
1

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