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H2257H06A5TR

更新时间： 2024-11-02 18:00:55
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 128K
描述
Rectifier Diode, 1 Phase, 1 Element, Silicon, 6.53 X 6.53 MM, ROHS COMPLIANT, DIE-1

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中文翻译

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H2257H06A5TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DIE
包装说明：6.53 X 6.53 MM, ROHS COMPLIANT, DIE-1针数：1
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.40风险等级：5.76
应用：GENERAL PURPOSE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：S-XUUC-N1元件数量：1
相数：1端子数量：1
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：UNCASED CHIP峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

H2257H06A5TR 数据手册

 浏览型号H2257H06A5TR的Datasheet PDF文件第2页浏览型号H2257H06A5TR的Datasheet PDF文件第3页浏览型号H2257H06A5TR的Datasheet PDF文件第4页 
H2257H06A5B  
Vishay High Power Products  
HEXFREDTM  
Die in Wafer Form  
FEATURES  
RoHS  
PRODUCT SUMMARY  
COMPLIANT  
• 100 % tested at probe  
VF  
1.2 V maximum  
• Available in tape and reel (upon request)  
VBR  
600 V  
5"  
Wafer  
• Chip pack, and sawn on film (part number shown is for die  
in waveform; contact factory for these other options)  
• Designed and qualified for industrial level  
GENERAL INFORMATION  
The datasheet is based on Vishay HPP sample testing under  
certain predetermined and assumed conditions, and is  
provided for illustration purposes only. Customers are  
encouraged to perform testing in actual proposed packaged  
and use conditions. Vishay HPP die products are tested  
using Vishay HPP-based quality assurance procedures and  
are manufactured using Vishay HPP’s established  
processes. Programs for customer-specified testing are  
available upon request. Vishay HPP has experienced  
assembly yields of generally 95 % or greater for individual  
die; however, customer’s results may vary. Estimates such  
as those described and set forth in this datasheet for  
semiconductor die will vary depending on a number of  
packaging, handling, use and other factors. Sold die may not  
perform on an equivalent basis to standard package  
products and are therefore offered with a limited warranty as  
described in Vishay HPP’s applicable standard terms and  
conditions of sale. All Vishay HPP die sales are subject to  
Vishay HPP’s applicable standard terms and conditions of  
sale, which are available upon request.  
ELECTRICAL CHARACTERISTICS - WAFER FORM (TJ = 25 °C)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
1.2  
-
UNITS  
V
Forward voltage  
VFM  
IF = 10 A  
-
600  
-
-
-
-
Reverse breakdown voltage  
Reverse leakage current  
VBR  
IR = 200 µA  
IRM  
VRRM = 600 V  
250  
µA  
MECHANICAL DATA  
Nominal back metal composition, thickness  
Nominal front metal composition, thickness  
Dimensions  
Cr-Ni-Ag (1 kA - 2 kA - 3 kA)  
99 % Al, 1 % Si (3 microns)  
6.53 mm x 6.53 mm (0.257" x 0.257" [see drawing])  
125 mm, with standard < 100 > flat  
15 0.4 mils  
Wafer diameter  
Wafer thickness  
Relevant die mechanical drawing number  
Minimum street width  
01-5171  
100 microns  
Reject ink dot size  
0.25 mm diameter minimum  
Recommended storage environment  
Reference packaged part  
Store in original container, in dessicated nitrogen, with no contamination  
50MT060ULSTA  
Document Number: 93910  
Revision: 18-Jul-07  
For technical questions, contact: die-wafer@vishay.com  
www.vishay.com  
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