Datasheet > H1200NC200

H1200NC200

更新时间： 2024-01-18 18:37:18

品牌	Logo	应用领域
力特 - LITTELFUSE		驱动控制器驱动器
页数	文件大小	规格书
8页	332K
描述
Littelfuse提供种类广泛的高规格器件，其额定电压高达4.5kV (2.8kV直流母线)，可控额定电流高达4kA，可满足诸如牵引推进和辅助设备、交流工业驱动器、FACT和有源VAr控制器等应

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

H1200NC200 数据手册

NGB8202AN

Ignition IGBT

20 A, 400 V, N−Channel D²PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Overvoltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Littelfuse.com

20 AMPS, 400 VOLTS

Features

_CE(on)= 1.3 V @

• Ideal for Coil−on−Plug and Driver−on−Coil Applications

• Gate−Emitter ESD Protection

I_C= 10 A, V_GE. 4.5 V

• Temperature Compensated Gate−Collector Voltage Clamp Limits

Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to Logic or

Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• These are Pb−Free Devices

Applications

D PAK

CASE 418B

STYLE 4

• Ignition Systems

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Rating

Collector−Emitter Voltage

Collector−Gate Voltage

Gate−Emitter Voltage

Symbol

Value

440

Unit

CES

Collector

CER

440

"15

8202xxG

AYWW

Collector Current−Continuous

@ T = 25°C − Pulsed

Continuous Gate Current

1.0

Gate

Emitter

Transient Gate Current (t≤2 ms, f≤100 Hz)

ESD (Charged−Device Model)

Collector

ESD

2.0

GB8202xx = Device Code

xx = AN

ESD (Human Body Model)

R = 1500 W, C = 100 pF

8.0

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ESD (Machine Model) R = 0 W, C = 200 pF

ESD

500

Total Power Dissipation @ T = 25°C

150

1.0

W/°C

Derate above 25°C

ORDERING INFORMATION

Operating & Storage Temperature Range

T , T

−55 to +175

°C

stg

†

Device

Package

Shipping

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

NGB8202ANT4G

NGB8202ANTF4G

800/Tape & Reel

700/Tape & Reel

D PAK

(Pb−Free)

Publication Order Number:

December, 2016 − Rev. 10

NGB8202AN/D

12 3 4 5 6 7 8

下载PDF

与H1200NC200相关器件

型号	品牌	描述	获取价格	数据表
H1200NC20Y	LITTELFUSE	Littelfuse提供种类广泛的高规格器件，其额定电压高达4.5kV (2.8kV直流母	获取价格
H1200NC25D	LITTELFUSE	Gate Turn-Off SCR, 1340A I(T)RMS, 2500V V(DRM), 2000V V(RRM), 1 Element,	获取价格
H1200NC25E	IXYS	Gate Turn-Off SCR, 1340A I(T)RMS, 2500V V(DRM), 1875V V(RRM), 1 Element	获取价格
H1200NC25E	LITTELFUSE	Silicon Controlled Rectifier,	获取价格
H1200NC25F	LITTELFUSE	Silicon Controlled Rectifier,	获取价格
H1200NC25G	LITTELFUSE	Silicon Controlled Rectifier,	获取价格