Datasheet > H1200NC25G

H1200NC25G

更新时间： 2024-11-21 20:43:47

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
16页	845K
描述
Silicon Controlled Rectifier,

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技术参数
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H1200NC25G 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.63
Base Number Matches：	1

H1200NC25G 数据手册

Date:- 10 Jul, 2019

Data Sheet Issue:- 2

WESTCODE

An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor

Type H1200NC25#

Absolute Maximum Ratings

MAXIMUM

VOLTAGE RATINGS

LIMITS

UNITS

V_DRM

V_RSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage

2500

2600

100-2000

Non-repetitive peak reverse voltage

MAXIMUM

LIMITS

RATINGS

UNITS

I_TGQM

L_s

Maximum peak turn-off current, (note 2)

Snubber loop inductance, I_TM=I_TGQM, (note 2)

1200

0.3

µH

I_T(AV)M

I_T(RMS)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C (note 3)

Nominal RMS on-state current, 25°C (note 3)

Peak non-repetitive surge current t_p=10ms

Peak non-repetitive surge current, (Note 4)

I²t capacity for fusing t_p=10ms

670

1340

10.5

kA²s

A/µs

550

di/dt_cr

P_FGM

P_RGM

I_FGM

V_RGM

t_off

Critical rate of rise of on-state current, (note 5)

Peak forward gate power

1000

210

Peak reverse gate power

Peak forward gate current

140

Peak reverse gate voltage (note 6).

Minimum permissible off-time, I_TM=I_TGQM, (note 2)

Minimum permissible on-time

µs

°C

t_on

T_jop

Operating temperature range

-40 to +125

-40 to +150

T_stg

Storage temperature range

Notes:-

1) V_GK=-2Volts.

2) T_j=125°C, V_D=80%V_DM, V_DM<V_DRM, di_GQ/dt=20A/µs, C_S=3µF.

3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, t_p=2ms

5) For di/dt>1000A/µs, consult factory.

6) May exceed this value during turn-off avalanche period.

Data Sheet. Type H1200NC25# Issue 2

Page 1 of 15

July, 2019

12 3 4 5 6 7...16

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