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H1200NC25G PDF预览

H1200NC25G

更新时间: 2024-11-07 20:43:47
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
16页 845K
描述
Silicon Controlled Rectifier,

H1200NC25G 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.63
Base Number Matches:1

H1200NC25G 数据手册

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Date:- 10 Jul, 2019  
Data Sheet Issue:- 2  
WESTCODE  
An IXYS Company  
Fast Symmetrical Gate Turn-Off Thyristor  
Type H1200NC25#  
Absolute Maximum Ratings  
MAXIMUM  
VOLTAGE RATINGS  
LIMITS  
UNITS  
VDRM  
VRSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage  
2500  
V
V
V
V
2600  
100-2000  
100-2000  
Non-repetitive peak reverse voltage  
MAXIMUM  
LIMITS  
RATINGS  
UNITS  
A
ITGQM  
Ls  
Maximum peak turn-off current, (note 2)  
Snubber loop inductance, ITM=ITGQM, (note 2)  
1200  
0.3  
µH  
IT(AV)M  
IT(RMS)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C (note 3)  
Nominal RMS on-state current, 25°C (note 3)  
Peak non-repetitive surge current tp=10ms  
Peak non-repetitive surge current, (Note 4)  
I2t capacity for fusing tp=10ms  
670  
A
A
1340  
10.5  
19  
kA  
kA  
kA2s  
A/µs  
W
550  
di/dtcr  
PFGM  
PRGM  
IFGM  
VRGM  
toff  
Critical rate of rise of on-state current, (note 5)  
Peak forward gate power  
1000  
210  
Peak reverse gate power  
8
kW  
A
Peak forward gate current  
140  
Peak reverse gate voltage (note 6).  
Minimum permissible off-time, ITM=ITGQM, (note 2)  
Minimum permissible on-time  
18  
V
80  
µs  
µs  
°C  
°C  
ton  
20  
Tjop  
Operating temperature range  
-40 to +125  
-40 to +150  
Tstg  
Storage temperature range  
Notes:-  
1) VGK=-2Volts.  
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=3µF.  
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Half-sinewave, tp=2ms  
5) For di/dt>1000A/µs, consult factory.  
6) May exceed this value during turn-off avalanche period.  
Data Sheet. Type H1200NC25# Issue 2  
Page 1 of 15  
July, 2019  

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