Date:- 10 Jul, 2019
Data Sheet Issue:- 2
An IXYS Company
Fast Symmetrical Gate Turn-Off Thyristor
Type H1200NC25#
Absolute Maximum Ratings
MAXIMUM
VOLTAGE RATINGS
LIMITS
UNITS
VDRM
VRSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
2500
V
V
V
V
2600
100-2000
100-2000
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
RATINGS
UNITS
A
ITGQM
Ls
Maximum peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQM, (note 2)
1200
0.3
µH
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms
670
A
A
1340
10.5
19
kA
kA
kA2s
A/µs
W
550
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
1000
210
Peak reverse gate power
8
kW
A
Peak forward gate current
140
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2)
Minimum permissible on-time
18
V
80
µs
µs
°C
°C
ton
20
Tjop
Operating temperature range
-40 to +125
-40 to +150
Tstg
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=3µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
Data Sheet. Type H1200NC25# Issue 2
Page 1 of 15
July, 2019