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H11G3V

更新时间： 2024-09-21 21:16:55
品牌 Logo 应用领域
安森美 - ONSEMI 输出元件光电
页数 文件大小 规格书
6页 300K
描述
Optocoupler - Transistor Output, 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, PLASTIC, DIP-6

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中文翻译

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H11G3V 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：PLASTIC, DIP-6Reach Compliance Code：compliant
HTS代码：8541.40.80.00风险等级：5.87
Coll-Emtr Bkdn Voltage-Min：55 V配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
标称电流传输比：200%最大暗电源：100 nA
最大正向电流：0.06 A最大绝缘电压：7500 V
JESD-609代码：e0元件数量：1
最高工作温度：100 °C最低工作温度：-55 °C
光电设备类型：DARLINGTON OUTPUT OPTOCOUPLER端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

H11G3V 数据手册

 浏览型号H11G3V的Datasheet PDF文件第2页浏览型号H11G3V的Datasheet PDF文件第3页浏览型号H11G3V的Datasheet PDF文件第4页浏览型号H11G3V的Datasheet PDF文件第5页浏览型号H11G3V的Datasheet PDF文件第6页 
Order this document  
by H11G1/D  
SEMICONDUCTOR TECHNICAL DATA  
[CTR = 1000% Min]  
[CTR = 1000% Min]  
GlobalOptoisolator  
[CTR = 200% Min]  
The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs  
optically coupled to silicon photodarlington detectors which have integral  
base–emitter resistors. The on–chip resistors improve higher temperature  
leakage characteristics. Designed with high isolation, high CTR, high voltage  
and low leakage, they provide excellent performance.  
*Motorola Preferred Devices  
STYLE 1 PLASTIC  
•
•
•
High CTR, H11G1 & H11G2 — 1000% (@ I = 10 mA), 500% (@ I = 1 mA)  
F
F
High V  
(BR)CEO  
, H11G1 — 100 Volts, H11G2 — 80 Volts  
To order devices that are tested and marked per VDE 0884 requirements, the  
suffix ”V” must be included at end of part number. VDE 0884 is a test option.  
6
1
Applications  
•
•
•
•
Interfacing and coupling systems of different potentials and impedances  
Phase and Feedback Controls  
STANDARD THRU HOLE  
CASE 730A–04  
General Purpose Switching Circuits  
Solid State Relays  
SCHEMATIC  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
1
6
Rating  
Symbol  
Value  
Unit  
INPUT LED  
Reverse Voltage  
V
R
6
60  
3
Volts  
mA  
2
3
5
4
Forward Current — Continuous  
I
F
F
Forward Current — Peak  
Pulse Width = 300 µs, 2% Duty Cycle  
I
Amps  
LED Power Dissipation @ T = 25°C  
P
120  
1.41  
mW  
mW/°C  
A
D
PIN 1. ANODE  
2. CATHODE  
3. N.C.  
Derate above 25°C  
OUTPUT DETECTOR  
Collector–Emitter Voltage  
4. EMITTER  
5. COLLECTOR  
6. BASE  
H11G1  
H11G2  
H11G3  
V
V
100  
80  
55  
Volts  
CEO  
Emitter–Base Voltage  
7
Volts  
mA  
EBO  
Collector Current — Continuous  
I
C
150  
Detector Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
150  
1.76  
mW  
mW/°C  
A
TOTAL DEVICE  
Total Device Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
250  
2.94  
mW  
mW/°C  
A
(2)  
Operating Junction Temperature Range  
T
–55 to +100  
–55 to +150  
260  
°C  
°C  
A
(2)  
Storage Temperature Range  
T
stg  
Soldering Temperature (10 s)  
T
°C  
L
(1)  
Isolation Surge Voltage  
(Peak ac Voltage, 60 Hz, 1 sec Duration)  
V
ISO  
7500  
Vac(pk)  
1. Isolation surge voltage is an internal device dielectric breakdown rating.  
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.  
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
GlobalOptoisolator is a trademark of Motorola, Inc.  
REV 1  
Motorola, Inc. 1995  
123456

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