Datasheet > GTVA220701FAV1R2XTMA1

GTVA220701FAV1R2XTMA1

更新时间： 2024-02-15 19:23:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	390K
描述
RF Small Signal Field-Effect Transistor,

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技术参数
数据手册

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GTVA220701FAV1R2XTMA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.78	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

GTVA220701FAV1R2XTMA1 数据手册

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GTVA220701FA

Thermally-Enhanced High Power RF GaN HEMT

70 W, 50 V, 1805 – 2170 MHz

Description

The GTVA220701FA is a 70-watt (P

) GaN high electron mobility

3dB

transistor (HEMT) for use in multi-standard cellular power ampliﬁer

applications. It features input matching, high efficiency, and a

thermally-enhanced package with earless ﬂange.

GTVA220701FA

Package H-37265J-2

Features

Single-carrier WCDMA Drive-up

•

GaN HEMT technology

Input matched

V_DD= 48 V, I_DQ= 200 mA, ƒ = 1805 MHz

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Typical CW performance, 1880 MHz, 48 V

- Output power at P = 45 W

3dB

- Efﬁciency = 60.7%

- Gain = 21.6 dB

Efficiency

Gain

•

Human Body Model, Class 1A (per ANSI/ESDA/

JEDEC JS-001)

Capable of handling 10:1 VSWR @48 V, 40 W (CW)

output power

-20

-40

-60

-80

RoHS-compliant

PAR @ 0.01% CCDF

g220701fa-gr1a

Average Output Power (dBm)

RF Characteristics

Single-carrier LTE Specifications (tested in Infineon test fixture)

= 48 V, I = 200 mA, P = 6.3 W avg, ƒ = 2170 MHz, 3GPP signal, 3.84 channel bandwidth,

OUT

peak/average = 10.6 dB @ 0.01% CCDF

Characteristic

Symbol

Min

20.75

24.5

—

Typ

Max

—

Unit

Linear Gain

Drain Efﬁciency

h_D

—

Adjacent Channel Power Ratio

ACPR

–36.5

–33

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 03, 2017-04-06

12 3 4 5 6 7...10

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