Datasheet > GTVA221701FA_15

GTVA221701FA_15

更新时间： 2022-02-26 12:49:58

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
4页	616K
描述
Thermally-Enhanced High Power RF GaN HEMT

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GTVA221701FA_15 数据手册

GTVA221701FA

advance speciﬁcation

Thermally-Enhanced High Power RF GaN HEMT

170 W, 50 V, 1805 – 2170 MHz

Description

Advance Specification Data

Sheets describe products that

are being considered by Inﬁneon

for development and market intro-

duction. The target performance

shown in Advance Speciﬁcations

is not ﬁnal and should not be used

for any design activity. Please

contact Inﬁneon about the future

availability of these products.

The GTVA221701FA is a 170-watt (P

) GaN high electron mobility

3dB

transistor (HEMT) for use in multi-standard cellular power ampliﬁer

applications. It features input matching, high efficiency, and a

thermally-enhanced package with earless ﬂange.

Features

•ꢀ Input matched

•ꢀ Typical Pulsed CW performance, 1805 MHz, 48 V, single side

- Output power at P

- Efﬁciency = 70%

- Gain = 18 dB

= 200 W

3dB

•ꢀ Capable of handling 10:1 VSWR @48 V, 140 W (CW) output

power

•ꢀ GaN HEMT technology

•ꢀ High power density

•ꢀ High efﬁciency

GTVA261701FA

Package H-37265J-2

•ꢀ RoHS-compliant

Target RF Characteristics

Single- carrier WCDMA Speciﬁcations (tested in Inﬁneon test ﬁxture)

= 48 V, I

= 300 mA, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 9.9 dB @ 0.01% CCDF

Characteristics

Conditions

Symbol

Min

—

Typ

Max

—

Unit

Linear Gain

Drain Efﬁciency

ƒ = 1805 MHz, P

= 50 W avg

—

OUT

Adjacent Channel Power Ratio

Linear Gain

ACPR

—

–32

—

dBc

—

Drain Efﬁciency

ƒ = 2170 MHz, P

—

OUT

Adjacent Channel Power Ratio

ACPR

—

–28

—

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Advance Speciﬁcation 1 of 4

Rev. 01, 2015-07-27

12 3 4

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