GTVA262711FA
Thermally-Enhanced High Power RF GaN on SiC HEMT
300 W, 48 V, 2620 – 2690 MHz
Description
The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency,
and a thermally-enhanced package with earless flange.
Package Types: H-87265J-2
Single-carrier WCDMA Drive-up
Features
VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 10 dB PAR
•
•
•
GaN on SiC HEMT technology
Input matched
3.84 MHz bandwidth
24
20
16
12
8
60
40
20
0
Gain
Typical pulsed CW performance: 10 µs pulse
width, 10% duty cycle, 2690 MHz, 48 V
- Output power at P3dB = 300 W
- Efficiency = 62%
- Gain = 19.1 dB
•
•
•
Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
Efficiency
-20
-40
-60
Capable of handling 10:1 VSWR @48 V, 70 W (CW)
output power
PAR @ 0.01% CCDF
4
Pb-free and RoHS-compliant
g262711fa-gr1a
0
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in the production test fixture)
VDD = 48 V, IDQ = 320 mA, POUT = 70 W avg, ƒ = 2690 MHz. 3GPP WDMA signal, 3.84 MHz channel bandwidth,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Gps
Min.
16
Typ.
18
Max.
—
Unit
dB
Gain
Drain Efficiency
hD
38
38.5
–27.5
6.3
—
%
Adjacent Channel Power Ratio
Output PAR @ 0.01% CCDF
ACPR
OPAR
—
–25
—
dBc
dB
5.7
Note:
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Rev. 04.4, 2022-1-27
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