Datasheet > GTVA263202FCV1R0

GTVA263202FCV1R0

更新时间： 2024-01-22 06:18:33

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	358K
描述
RF Power Field-Effect Transistor

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技术参数
数据手册

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GTVA263202FCV1R0 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

GTVA263202FCV1R0 数据手册

GTVA263202FC

Thermally-Enhanced High Power RF GaN HEMT

340 W, 48 V, 2620 – 2690 MHz

Description

The GTVA263202FC is a 340-watt (P ) GaN high electron mobility

3dB

transistor (HEMT) for use in multi-standard cellular power amplifier

applications.It features input matching, high efficiency, and a thermally-

enhanced surface-mount package with earless flange.

GTVA263202FC

Package H-37248-4

Features

Single-carrier WCDMA Drive-up

V_DD= 48 V, I_DQ(M)= 200 mA, I_DQ(PK)= 200 mA,

ƒ = 2690 MHz 3GPP WCDMA signal,

PAR = 10 dB, 3.84 MHz BW

•

GaN HEMT technology

Input matched

Typical pulsed CW performance, 2690 MHz, 48 V,

combined outputs

- Output power at P

- Drain efﬁciency = 70%

- Gain = 16 dB

= 340 W

3dB

Efficiency

Gain

•

Capable of handling 10:1 VSWR @48 V, 80 W

(CW) output power

•

Integrated ESD protection

Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

-20

-40

-60

-80

•

Low thermal resistance

Pb-free and RoHS compliant

PAR @ 0.01% CCDF

gtva263202fc_g1

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Specifications (tested in Infineon production test fixture)

= 48 V, I = 200 mA (per side), P = 80 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/

OUT

average = 10 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

Typ

Max

—

Unit

Drain Efﬁciency

h_D

—

Adjancent Channel Power Ratio

ACPR

—

–29

–26.5

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 02, 2016-08-30

12 3 4 5 6 7 8

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