Datasheet > GTVA261701FA

GTVA261701FA

更新时间： 2022-02-26 14:50:39

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	591K
描述
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 â 2690 MHz

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GTVA261701FA 数据手册

GTVA261701FA

Thermally-Enhanced High Power RF GaN on SiC HEMT

170 W, 50 V, 2620 – 2690 MHz

Description

The GTVA261701FA is a 170-watt (P ) GaN on SiC high electron

3dB

mobility transistor (HEMT) for use in multi-standard cellular power

ampliﬁer applications. It features input matching, high efﬁciency, and

a thermally-enhanced package with earless ﬂange.

GTVA261701FA

Package H-37265J-2

Features

Single-carrier WCDMA Drive-up

•ꢀ GaN on SiC HEMT technology

•ꢀ Input Matched

V_DD= 48 V, I_DQ= 200 mA, ƒ = 2620 MHz

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

•ꢀ Typical CW performance, 2690 MHz, 48 V, single

side

- Output power at P

- Efficiency = 75%

- Gain = 15 dB

= 170 W

3dB

Efficiency

•ꢀ Human Body Model, Class 1B (per ANSI/ESDA/

JEDEC JS-001)

•ꢀ Capable of handling 10:1 VSWR @48 V, 40 W (CW)

Gain

output power

-20

-40

-60

-80

•ꢀ RoHS-compliant

PAR @ 0.01% CCDF

g261701fa-gr1a

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture)

= 48 V, I = 200 mA, P = 40 W avg, ƒ = 2690 MHz. 3GPP WDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/

OUT

average @ 0.01% CCDF.

Characteristic

Gain

Symbol

Min

Typ

Max

—

Unit

Drain Efficiency

h_D

—

Adjacent Channel Power Ratio

ACPR

—

–29

–25

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 05, 2018-05-08

4600 Silicon Drive

Durham, NC 27703

www.wolfspeed.com

12 3 4 5 6 7...10

下载PDF

与GTVA261701FA相关器件

型号	品牌	描述	获取价格	数据表
GTVA261701FA_15	INFINEON	Thermally-Enhanced High Power RF GaN HEMT	获取价格
GTVA261701FA-V1	MACOM	High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz	获取价格
GTVA261802FC	CREE	Thermally-Enhanced High Power RF GaN on SiC H	获取价格
GTVA261802FC-V1	MACOM	High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz	获取价格
GTVA261802FC-V1-R0	CREE	Thermally-Enhanced High Power RF GaN on SiC H	获取价格
GTVA261802FC-V1-R2	CREE	Thermally-Enhanced High Power RF GaN on SiC H	获取价格