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GT60N322

更新时间： 2024-09-15 03:40:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关晶体管双极性晶体管局域网
页数 文件大小 规格书
6页 167K
描述
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application

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中文翻译

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GT60N322 技术参数

生命周期：Transferred零件包装代码：TO-3P
包装说明：LEAD FREE, 2-21F2C, TO-3P(LH), 3 PIN针数：2
Reach Compliance Code：unknown风险等级：5.26
Is Samacsys：NJESD-30 代码：R-PSFM-T3
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

GT60N322 数据手册

 浏览型号GT60N322的Datasheet PDF文件第2页浏览型号GT60N322的Datasheet PDF文件第3页浏览型号GT60N322的Datasheet PDF文件第4页浏览型号GT60N322的Datasheet PDF文件第5页浏览型号GT60N322的Datasheet PDF文件第6页 
GT60N322  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  
GT60N322  
Voltage Resonance Inverter Switching Application  
Unit: mm  
•
•
•
•
•
Enhancement mode type  
High speed : t = 0.11 μs (typ.) (I = 60 A)  
Low saturation voltage : V  
f
C
= 2.4 V (typ.) (I = 60 A)  
CE (sat)  
C
FRD included between emitter and collector  
TO-3P(LH) (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
1000  
±25  
V
V
CES  
GES  
@ Tc = 100°C  
29  
Continuous collector  
current  
I
A
A
A
C
@ Tc = 25°C  
57  
Pulsed collector current  
Diode forward current  
I
120  
CP  
DC  
I
15  
F
JEDEC  
JEITA  
―
―
Pulsed  
I
120  
FP  
@ Tc = 100°C  
@ Tc = 25°C  
80  
Collector power  
dissipation  
P
W
C
200  
TOSHIBA  
2-21F2C  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 9.75 g (typ.)  
Storage temperature range  
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance (IGBT)  
Thermal resistance (diode)  
R
R
0.625  
4.0  
°C/W  
°C/W  
th (j-c)  
th (j-c)  
Equivalent Circuit  
Marking  
Collector  
Part No. (or abbreviation code)  
Lot No.  
TOSHIBA  
GT60N322  
Gate  
JAPAN  
Emitter  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
1
2006-11-01  
123456

中文翻译

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