Datasheet > GT45F123

GT45F123

更新时间： 2024-02-08 11:11:37

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网栅双极性晶体管
页数	文件大小	规格书
7页	261K
描述
TRANSISTOR 300 V, N-CHANNEL IGBT, TO-220AB, 2-10U1C, TO-220SIS, 3 PIN, Insulated Gate BIP Transistor

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技术参数
数据手册

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GT45F123 技术参数

生命周期：	Transferred	零件包装代码：	TO-220AB
包装说明：	2-10U1C, TO-220SIS, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.24
外壳连接：	ISOLATED	集电极-发射极最大电压：	300 V
配置：	SINGLE	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON	标称断开时间 (toff)：	290 ns
标称接通时间 (ton)：	230 ns	Base Number Matches：	1

GT45F123 数据手册

GT45F123

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT45F123

Unit: mm

For PDP-TV Applications

•

5th generation (trench gate structure) IGBT

Enhancement-mode

Low input capacitance: C_ies= 2700pF (typ.)

Peak collector current: I

TO-220SIS package

= 200 A (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

300

CES

± 30

GES

Pulse

(Note 1)

Collector current

200

1. Gate

Tc=25°C

Ta=25°C

Collector power

dissipation

2. Collector

3. Emitter

Junction temperature

150

°C

JEDEC

Storage temperature range

stg

−55 to 150

JEITA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

Weight: 2 g (typ.)

2-10U1C

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Rating

4.8

Unit

Thermal resistance , junction to case

th (j-c)

°C/W

(Tc = 25°C)

Thermal resistance , junction to

ambient

th (j-a)

62.5

°C/W

(Ta = 25°C)

Marking

45F123

Part No. (or abbreviation code)

Lot code

Note 1: I_CPmaximum rating(200A) is limited by pulse width (3 μs ).

2007-09-13

12 3 4 5 6 7

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