Datasheet > GSS2030

GSS2030

更新时间： 2024-11-21 03:39:59

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
7页	433K
描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GSS2030 数据手册

Pb Free Plating Product

ISSUED DATE :2006/04/24

REVISED DATE :

GTM

CORPORATION

N-CH BVDSS

20V

GSS2030

N-CH RDS(ON) 30mꢀ

N-CH I

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

P-CH BVDSS

-20V

N-CH RDS(ON) 50mꢀ

N-CH I -5A

Description

The GSS2030 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited

for low voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Low On-resistance

*Fast Switching

Package Dimensions

Millimeter

REF.

Min.

Max.

6.20

5.00

4.00

8°

Min.

Max.

0.25

0.49

1.75

5.80

4.80

3.80

0°

0.10

0.35

1.35

0.375 REF.

0.40

0.19

0.90

0.25

45°

1.27 TYP.

Absolute Maximum Ratings

Ratings

N-channel P-channel

Parameter

Symbol

Unit

Drain-Source Voltage

V_DS

V_GS

±8

-20

±8

-5

Gate-Source Voltage

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

4.8

-4

I_DM

-20

Total Power Dissipation

P_D@T

=25к

2.0

W/к

Linear Derating Factor

0.016

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

62.5

к/W

GSS2030

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