Pb Free Plating Product
ISSUED DATE :2005/08/29
GTM
CORPORATION
REVISED DATE :2005/09/29B
N-CH BVDSS
30V
GSS4507
N-CH RDS(ON) 36mΩ
N-CH I
D
6.0A
-30V
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
P-CH BVDSS
N-CH RDS(ON) 72mΩ
D
Description
The GSS4507 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower Gate Charge
*Fast Switching Performance
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.20
5.00
4.00
8̓
Min.
Max.
0.25
0.49
1.75
5.80
4.80
3.80
0̓
0.10
0.35
1.35
A
B
C
D
E
F
M
H
L
J
K
0.375 REF.
45̓
1.27 TYP.
0.40
0.19
0.90
0.25
G
Absolute Maximum Ratings
Ratings
N-channel P-channel
Parameter
Symbol
Unit
Drain-Source Voltage
VDS
VGS
30
f20
6
-30
f20
-4.2
-3.4
-20
V
V
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
A
ID @T
ID @T
A
=25к
=70к
A
4.8
20
A
IDM
A
PD @T
A
=25к
Total Power Dissipation
2.0
W
W/ć
ć
Linear Derating Factor
0.016
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-a
62.5
ć/W
GSS4507
Page: 1/7