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GSIB4A20/1-E3 PDF预览

GSIB4A20/1-E3

更新时间： 2024-11-07 19:58:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 55K
描述
BRIDGE RECTIFIER,1-PHASE FULL-WAVE,200V V(RRM),BR-7W

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中文翻译

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GSIB4A20/1-E3 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.77Is Samacsys：N
配置：BRIDGE, 4 ELEMENTS二极管类型：BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：1 V最大非重复峰值正向电流：80 A
元件数量：4最高工作温度：150 °C
最大输出电流：2.3 A最大重复峰值反向电压：200 V
子类别：Bridge Rectifier Diodes表面贴装：NO
Base Number Matches：1

GSIB4A20/1-E3 数据手册

 浏览型号GSIB4A20/1-E3的Datasheet PDF文件第2页 
GSIB4A20 thru GSIB4A80  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Single-In-Line  
Bridge Rectifier  
Reverse Voltage 200 and 800 V  
Forward Current 4.0 A  
Features  
• Plastic package has Underwriters Laboratory  
Case Style GSIB-3G  
0.118 x 45 Chamfer  
Flammability Classification 94V-0  
• High case dielectric strength of 1500 VRMS  
• Ideal for printed circuit boards  
• Glass passivated chip junction  
• High surge current capability  
0.996 (25.3)  
0.972 (24.7)  
0.492  
(12.5)  
0.150 (3.8)  
0.134 (3.4)  
0.134 (3.4)  
0.122 (3.1)  
Dia.  
Detail Z  
enlarged  
0.602 (15.3)  
0.579 (14.7)  
0.157 (4.0)  
0.382 (9.7)  
0.366 (9.3)  
0.059  
(1.50)  
Mechanical Data  
Case: Molded plastic body over passivated junctions  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
High temperature soldering guaranteed:  
260°C/10 seconds, 0.375 (9.5mm) lead length,  
5lbs. (2.3kg) tension  
Mounting Position: Any(3)  
Mounting Torque: 5 in-lbs max.  
Weight: 0.15oz., 4.0g  
Z
+
0.057(1.45)  
0.041(1.05)  
0.709 (18.0)  
0.669 (17.0)  
0.146 (3.7)  
0.130 (3.3)  
0.709 (18.0)  
0.669 (17.0)  
0.078 (1.98)  
0.062 (1.58)  
0.012  
(0.30)  
0.189 (4.8)  
0.173 (4.4)  
0.042 (1.07)  
0.038 (0.96)  
Dia.  
0.126 (3.2)  
0.110 (2.8)  
0.303 (7.7)  
(3x)  
0.287 (7.3)  
Packaging codes-options:  
Dimensions in inches and (millimeters)  
Use suffix "N" for no stand-off  
1-400 ea. per Bulk Tray Stack  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol GSIB4A20 GSIB4A40 GSIB4A60 GSIB4A80  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
Maximum DC blocking voltage  
V
Maximum average forward  
rectified output current at  
TC = 100OC(1)  
TA = 25OC (2)  
4.0(1)  
2.3(2)  
IF(AV)  
A
Peak forward surge current single sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
I2t  
80  
32  
26(2)  
5(1)  
A
Rating for fusing (t < 8.3ms)  
A2sec  
°C/W  
°C  
R
θJA  
Typical thermal resistance per leg  
Operating junction storage and temperature range  
R
θJC  
TJ, TSTG  
–55 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol GSIB4A20 GSIB4A40 GSIB4A60 GSIB4A80  
Unit  
Maximum instantaneous forward voltage  
drop per leg at 2.0 A  
VF  
IR  
1.00  
V
Maximum DC reverse current at rated TA = 25°C  
5.0  
400  
µA  
DC blocking voltage per leg  
TA = 125°C  
Notes: (1) Unit case mounted on Al plate heatsink  
(2) Units mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads and 0.375” (9.5mm) lead length  
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw  
Document Number 88858  
26-Nov-03  
www.vishay.com  
1
12

中文翻译

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与GSIB4A20/1-E3相关器件

型号 品牌 获取价格 描述 数据表
GSIB4A20/51 VISHAY

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 		DIODE 2.3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge
GSIB4A20/72 VISHAY

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 		DIODE 2.3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge
GSIB4A20/72-E3 VISHAY

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 		DIODE 2.3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge
GSIB4A20E3 VISHAY

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 		DIODE 2.3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-3G, 4 P
GSIB4A20-E3 VISHAY

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 		DIODE 2.3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-3G, 4 P
GSIB4A20-E3/51 VISHAY

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 		DIODE 2.3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge
GSIB4A20-E3/72 VISHAY

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 		DIODE 2.3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge
GSIB4A20N VISHAY

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 		Bridge Rectifier Diode, 2.3A, 200V V(RRM),
GSIB4A20N/1-E3 VISHAY

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 		BRIDGE RECTIFIER,1-PHASE FULL-WAVE,200V V(RRM),BR-7W
GSIB4A20N-E3 VISHAY

获取价格

 		DIODE 2.3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge

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