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GSIB4A40-E3/45 PDF预览

GSIB4A40-E3/45

更新时间: 2024-09-18 14:50:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 118K
描述
Bridge Rectifier Diode, 2.3A, 400V V(RRM),

GSIB4A40-E3/45 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-609代码:e3
最大非重复峰值正向电流:80 A元件数量:4
最高工作温度:150 °C最大输出电流:2.3 A
最大重复峰值反向电压:400 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

GSIB4A40-E3/45 数据手册

 浏览型号GSIB4A40-E3/45的Datasheet PDF文件第2页浏览型号GSIB4A40-E3/45的Datasheet PDF文件第3页浏览型号GSIB4A40-E3/45的Datasheet PDF文件第4页 
GSIB4A20 thru GSIB4A80  
Vishay General Semiconductor  
Glass Passivated Single-In-Line Bridge Rectifier  
FEATURES  
• UL recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
• High case dielectric strength of 1500 V  
• Solder dip 260 °C, 40 s  
RMS  
~
~
~
~
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Case Style GSIB-3G  
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for monitor, TV, printer, switching mode  
power supply, adapter, audio equipment, and home  
appliances applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
4 A  
MECHANICAL DATA  
VRRM  
IFSM  
IR  
200 V to 800 V  
80 A  
Case: GSIB-3G  
Epoxy meets UL 94V-0 flammability rating  
5 µA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
VF  
1.0 V  
TJ max.  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
GSIB4A20  
GSIB4A40  
400  
GSIB4A60  
600  
GSIB4A80  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
200  
V
V
V
VRMS  
140  
280  
420  
560  
Maximum DC blocking voltage  
VDC  
200  
400  
600  
800  
Maximum average forward rectified  
output current at  
TC = 100 °C  
TA = 25 °C  
4.0 (1)  
IF(AV)  
A
2.3 (2)  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
80  
A
Rating for fusing (t < 8.3 ms)  
I2t  
32  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Notes:  
(1) Unit case mounted on aluminum plate heatsink  
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
Document Number: 88858  
Revision: 01-Feb-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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